NVTR01P02LT1G The On Semiconductor NVTR01P02LT1G is a P-Channel MOSFET designed for power management in space-sensitive applications. It offers low RDS(on) for improved efficiency.
Mfr Part #:

NVTR01P02LT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVTR01P02LT1G is a P-Channel MOSFET designed for power management in space-sensitive applications. It offers low RDS(on) for improved efficiency.
✓ Total Stock: 420,765 pcs
$ Price Range: $0.99

NVTR01P02LT1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
417,265 pcs
417265 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,500 pcs
3500 pcs On Request 1 On Request On Request On Request On Request On Request

NVTR01P02LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVTR01P02LT1G Description

Short technical summary and product information.

The NVTR01P02LT1G from On Semiconductor is a P-Channel MOSFET in a compact SOT-23-3 package. This device is designed for power management circuitry in portable and battery-powered products, offering low RDS(on) to minimize power loss and conserve energy.

 

Key electrical characteristics include a Drain-to-Source Voltage (Vdss) of -20V and a continuous Drain Current (Id) of -1.3A at 25°C. The Gate-to-Source Voltage (Vgs) is ±12V, with a Gate Threshold Voltage (Vgs(th)) typically -1.0V. The Static Drain-to-Source On-Resistance (RDS(on)) is a maximum of 220mOhm at 750mA and 4.5V.

 

With a total power dissipation of 400mW (Ta), it is suitable for applications requiring efficient power control. The operating temperature range is from -55°C to 150°C. The surface mount SOT-23-3 package saves board space, making it ideal for DC-DC converters and power management in devices like computers, printers, and cellular phones.

NVTR01P02LT1G Quick Information

Product Type: MOSFET
Canonical Name: NVTR01P02LT1G P-Channel MOSFET
Subcategory: P-Channel

NVTR01P02LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVTR01P02LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVTR01P02LT1G Features

  • P-Channel MOSFET for power management.
  • Low RDS(on) for higher efficiency.
  • Compact SOT-23-3 surface mount package.
  • Rated for -20V drain-to-source voltage.
  • Continuous drain current of 1.3A.

NVTR01P02LT1G Applications

  • Ideal for DC-DC converters.
  • Used in portable battery-powered products.
  • Suitable for space-sensitive circuitry.
  • Power management in computers and printers.
  • Applications in cellular and cordless phones.

NVTR01P02LT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the Drain-to-Source Voltage (Vdss) for the NVTR01P02LT1G?

The Drain-to-Source Voltage (Vdss) is -20V.

What is the continuous drain current for this MOSFET?

The continuous drain current is -1.3A at 25°C.

What is the package type for the NVTR01P02LT1G?

The package type is SOT-23-3.

What is the typical Gate Threshold Voltage (Vgs(th))?

The typical Gate Threshold Voltage (Vgs(th)) is -1.0V at -250µA.

What is the maximum On-Resistance (RDS(on))?

The maximum On-Resistance (RDS(on)) is 220mOhm at 750mA and 4.5V.

What is the operating temperature range?

The operating and storage temperature range is -55°C to 150°C.

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