NVTJD4001NT1G The ON Semiconductor NVTJD4001NT1G is a dual N-channel MOSFET designed for small signal applications. It features a 30V drain-to-source voltage and a continuous drain current of 250mA.
Mfr Part #:

NVTJD4001NT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVTJD4001NT1G is a dual N-channel MOSFET designed for small signal applications. It features a 30V drain-to-source voltage and a continuous drain current of 250mA.
✓ Total Stock: 90,477 pcs
$ Price Range: $0.99

NVTJD4001NT1G Available from 4 distributors

✓ Authorised
✓ Non-Authorised

NVTJD4001NT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

NVTJD4001NT1G Description

Short technical summary and product information.

The ON Semiconductor NVTJD4001NT1G is a dual N-channel MOSFET suitable for various low-side load switch and battery-powered device applications. It offers a 30V drain-to-source voltage and a continuous drain current of 250mA at 25°C, with a maximum power dissipation of 272mW.

 

This MOSFET features low gate charge for fast switching and a small footprint, being 30% smaller than TSOP-6 packages. The device is available in an SC-88/SC70-6/SOT-363 surface-mount package. It has a gate threshold voltage typically around 1.2V and an on-resistance as low as 1.0 Ohm at 4.0V gate-to-source voltage.

 

Applications include Li-ion battery supplied devices such as cell phones, PDAs, and DSCs, as well as buck converters and level shifts. The NVTJD4001NT1G is AEC Q101 qualified, indicating its suitability for automotive applications. It is also Pb-free and RoHS compliant.

NVTJD4001NT1G Quick Information

Product Type: MOSFET
Series: NVTJD4001NT1G
Canonical Name: Dual N-Channel MOSFET
Subcategory: Dual N-Channel

NVTJD4001NT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NVTJD4001NT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVTJD4001NT1G Features

  • Dual N-Channel MOSFET configuration.
  • 30V drain-to-source voltage rating.
  • 250mA continuous drain current.
  • Low gate charge for fast switching.
  • Compact SC-88/SOT-363 package.

NVTJD4001NT1G Applications

  • Low side load switch applications.
  • Li-ion battery supplied devices.
  • Used in buck converters.
  • Suitable for level shifts.

NVTJD4001NT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NVTJD4001NT1G?

The drain-to-source voltage (Vdss) is 30V.

What is the continuous drain current of the NVTJD4001NT1G?

The continuous drain current is 250mA at 25°C.

What is the typical on-resistance for the NVTJD4001NT1G?

The typical on-resistance is 1.0 Ohm at 4.0V gate-to-source voltage and 10mA drain current.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the NVTJD4001NT1G supplied in?

It is supplied in the SC-88/SC70-6/SOT-363 package.

Is the NVTJD4001NT1G RoHS compliant?

Yes, the device is Pb-Free and RoHS Compliant.

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