| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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88,020 pcs
|
88020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,012 pcs
|
1012 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
445 pcs
|
445 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Vgs(th) (Max) @ Id |
The ON Semiconductor NVTJD4001NT1G is a dual N-channel MOSFET suitable for various low-side load switch and battery-powered device applications. It offers a 30V drain-to-source voltage and a continuous drain current of 250mA at 25°C, with a maximum power dissipation of 272mW.
This MOSFET features low gate charge for fast switching and a small footprint, being 30% smaller than TSOP-6 packages. The device is available in an SC-88/SC70-6/SOT-363 surface-mount package. It has a gate threshold voltage typically around 1.2V and an on-resistance as low as 1.0 Ohm at 4.0V gate-to-source voltage.
Applications include Li-ion battery supplied devices such as cell phones, PDAs, and DSCs, as well as buck converters and level shifts. The NVTJD4001NT1G is AEC Q101 qualified, indicating its suitability for automotive applications. It is also Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The continuous drain current is 250mA at 25°C.
The typical on-resistance is 1.0 Ohm at 4.0V gate-to-source voltage and 10mA drain current.
The operating junction and storage temperature range is -55°C to 150°C.
It is supplied in the SC-88/SC70-6/SOT-363 package.
Yes, the device is Pb-Free and RoHS Compliant.