NVTFWS070N10MCLTAG The ON Semiconductor NVTFWS070N10MCLTAG is an N-Channel MOSFET designed for power applications. It features a 100V drain-to-source voltage and a low on-resistance.
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NVTFWS070N10MCLTAG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVTFWS070N10MCLTAG is an N-Channel MOSFET designed for power applications. It features a 100V drain-to-source voltage and a low on-resistance.
✓ Total Stock: 36,000 pcs
$ Price Range: $0.99

NVTFWS070N10MCLTAG Available from 1 distributor

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NVTFWS070N10MCLTAG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVTFWS070N10MCLTAG Description

Short technical summary and product information.

The NVTFWS070N10MCLTAG is an N-Channel MOSFET from ON Semiconductor, designed for efficient power switching. It offers a drain-to-source voltage (Vds) of 100V and a continuous drain current (Id) of 4.5A at ambient temperature and 13A at case temperature.

 

This MOSFET boasts a low on-resistance (Rds(on)) of 65mOhm at 3A and 10V, minimizing conduction losses. Key electrical characteristics include a gate-to-source voltage (Vgs) range of ±20V and a gate threshold voltage (Vgs(th)) of 3V at 15µA. Input capacitance (Ciss) is 305pF at 50V, and gate charge (Qg) is 5.5nC at 10V.

 

With a maximum power dissipation of 2.9W at ambient temperature and 25W at case temperature, it operates within a junction temperature range of -55°C to 175°C. The device is housed in an 8-WDFN package suitable for surface mounting, with a footprint of 3.3 x 3.3 mm.

 

Environmental compliance includes RoHS3 compliance, MSL 1 (Unlimited) moisture sensitivity, and REACH unaffected status. The NVTFWS070N10MCLTAG is suitable for various power management applications where efficient switching and low losses are critical.

NVTFWS070N10MCLTAG Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET, 100V, 4.5A/13A, 65mOhm
Subcategory: N-Channel

NVTFWS070N10MCLTAG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVTFWS070N10MCLTAG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVTFWS070N10MCLTAG Features

  • 100V drain-to-source voltage rating.
  • 4.5A/13A continuous drain current.
  • Low 65mOhm Rds(on) at 3A, 10V.
  • Surface mount 8-WDFN package.
  • Operates from -55°C to 175°C.

NVTFWS070N10MCLTAG Applications

  • Suitable for power switching applications.
  • Ideal for low conduction loss designs.
  • Used in compact electronic circuits.
  • Efficient power management solutions.

NVTFWS070N10MCLTAG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVTFWS070N10MCLTAG?

The drain-to-source voltage (Vds) is 100V.

What is the maximum continuous drain current for the NVTFWS070N10MCLTAG?

The continuous drain current is 4.5A at ambient temperature and 13A at case temperature.

What is the on-resistance of the NVTFWS070N10MCLTAG?

The maximum on-resistance (Rds(on)) is 65mOhm at 3A and 10V.

What is the operating temperature range for this MOSFET?

The operating junction temperature range is -55°C to 175°C.

What type of package is the NVTFWS070N10MCLTAG in?

It is supplied in an 8-WDFN package with a 3.3x3.3mm footprint, suitable for surface mounting.

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