Mfr Part #:

NVTFWS052P04M8LTAG

The NVTFWS052P04M8LTAG is a P-Channel MOSFET from On Semiconductor with a -40V drain-to-source voltage. It offers low on-resistance and is suitable for various power applications.

✓ Total Stock: 3,080 pcs

$ Price Range: $0.99

NVTFWS052P04M8LTAG Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	2,080 pcs On Request	2080 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Braun Electronic Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

NVTFWS052P04M8LTAG Description

Short technical summary and product information.

The NVTFWS052P04M8LTAG is a P-Channel MOSFET manufactured by On Semiconductor. This device features a drain-to-source voltage (Vdss) of -40V and a maximum on-resistance (Rds On) of 69mOhm at 5A and 10V. It can handle continuous drain currents of 4.7A at 25°C ambient temperature and 13.2A at 25°C case temperature, with power dissipation ratings of 2.9W (ambient) and 23W (case).

Designed for compact applications, this MOSFET comes in an 8-WDFN (3.3x3.3 mm) surface-mount package. It operates within a temperature range of -55°C to 175°C. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and high-reliability applications. It is also Pb-Free, Halogen Free/BFR-Free, and RoHS Compliant.

Key electrical characteristics include a gate-to-source voltage (Vgs) of ±20V, a gate threshold voltage (Vgs(th)) of 2.4V at 95µA, and a gate charge (Qg) of 6.3nC at 10V. The input capacitance (Ciss) is 424pF at 20V.

NVTFWS052P04M8LTAG Quick Information

Product Type: MOSFET

Series: NVTFWS052P04M8LTAG

Canonical Name: NVTFWS052P04M8LTAG P-Channel MOSFET

Subcategory: P-Channel

NVTFWS052P04M8LTAG Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

NVTFWS052P04M8LTAG Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVTFWS052P04M8LTAG Features

P-Channel MOSFET with -40V drain-source voltage.
Low Rds On of 69mOhm at 5A, 10V.
Handles 4.7A (ambient) and 13.2A (case) current.
Compact 8-WDFN surface-mount package.
AEC-Q101 Qualified and RoHS Compliant.

NVTFWS052P04M8LTAG Applications

Suitable for power switching applications.
Ideal for compact electronic designs.
Automotive and high-reliability systems.
Low conduction loss designs.

NVTFWS052P04M8LTAG FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-to-source voltage for the NVTFWS052P04M8LTAG?

-40 V

What is the maximum on-resistance of the NVTFWS052P04M8LTAG?

69 mOhm @ 5A, 10V

What is the continuous drain current for the NVTFWS052P04M8LTAG?

4.7 A (Ta), 13.2 A (Tc)

What is the operating temperature range for this MOSFET?

-55°C ~ 175°C (TJ)

What package type is the NVTFWS052P04M8LTAG MOSFET supplied in?

8-WDFN (3.3x3.3)

Is the NVTFWS052P04M8LTAG RoHS compliant?

RoHS3 Compliant

What is the Moisture Sensitivity Level (MSL) for the NVTFWS052P04M8LTAG?

1 Unlimited

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
AEC Qualified	No
Automotive Grade	No
Current	4.7A (Ta), 13.2A (Tc)
Drain to Source Voltage (Vdss)	-40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	6.3 nC @ 10 V
Halogen Free	Halogen Free/BFR−Free
Industrial Grade	No
Input Capacitance (Ciss) (Max) @ Vds	424 pF @ 20 V
Medical Grade	No
Military Grade	No
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	2.9W (Ta), 23W (Tc)
Rds On (Max) @ Id, Vgs	69mOhm
Storage Temperature	°C ~ °C
Supplier Device Package	8-WDFN (3.3x3.3)
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.4V @ 95µA