| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
43,500 pcs
|
43500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVTFWS030N06CTAG is an N-Channel MOSFET from ON Semiconductor, designed for surface mount applications. It offers a drain-source voltage (Vdss) of 60V and can handle a continuous current of 6A (Ta) or 19A (Tc). The Rds On is a maximum of 29.7mOhm at 3A and 10V gate drive.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ). It has an input capacitance of 255 pF at 30V and a gate charge of 4.7 nC at 10V. The gate threshold voltage (Vgs(th)) is 4V at 13µA, with a maximum gate-source voltage of ±20V. The device is packaged in an 8-PowerWDFN format, suitable for surface mounting.
Key electrical characteristics include a maximum power dissipation of 2.5W (Ta) or 23W (Tc). The technology used is MOSFET (Metal Oxide).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 60V.
The continuous current is 6A when measured at the ambient temperature (Ta) and 19A when measured at the case temperature (Tc).
The Rds On is a maximum of 29.7mOhm at 3A and 10V.
The operating temperature range is -55°C to 175°C (TJ).
The NVTFWS030N06CTAG is in an 8-PowerWDFN package.
It is a surface mount device.