| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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19,500 pcs
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19500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This NVTFWS024N06CTAG MOSFET from ON Semiconductor is an N-Channel device with a drain-source voltage (Vdss) of 60V. It offers a continuous current rating of 7A when measured at ambient temperature and 24A when measured at case temperature.
The MOSFET is designed for surface mount applications and comes in an 8-WDFN package with dimensions of 3.3x3.3mm. Key electrical characteristics include a maximum on-resistance (Rds On) of 22.6mOhm at 3A and 10V gate-source voltage, a maximum gate charge (Qg) of 5.7nC at 10V, and a maximum input capacitance (Ciss) of 333pF at 30V.
With an operating temperature range of -55°C to 175°C (TJ), this component is suitable for various power management tasks. The maximum power dissipation is 2.5W at ambient temperature and 28W at case temperature. It is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 60V.
The continuous current rating is 7A at ambient temperature and 24A at case temperature.
The maximum on-resistance (Rds On) is 22.6mOhm at 3A and 10V gate-source voltage.
The operating temperature range is -55°C to 175°C (TJ).
It is a surface mount device.
It comes in an 8-PowerWDFN package.