| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
51,000 pcs
|
51000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NVTFWS015N04CTAG is an N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage of 40V and a maximum on-resistance of 17.3mOhm at a gate-to-source voltage of 10V and a drain current of 7.5A.
Key electrical characteristics include a gate charge of 6.3 nC at 10V and an input capacitance of 325 pF at 25V. The device can handle continuous drain currents of 9.4A at an ambient temperature of 25°C and 27A at a case temperature of 25°C. Power dissipation is rated at 2.9W ambient and 23W at the case.
Operating across a wide temperature range from -55°C to 175°C, this MOSFET is suitable for demanding environments. It is housed in an 8-WDFN package with surface mount technology, featuring a small footprint of 3.3x3.3mm for compact designs. The device is AEC-Q101 qualified and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 40V.
The maximum on-resistance is 17.3mOhm at 7.5A drain current and 10V gate-source voltage.
The operating junction temperature range is -55°C to 175°C.
It is supplied in an 8-WDFN package.
Yes, the device is RoHS3 Compliant.