| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
190 pcs
|
190 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVTFWS014P04M8LTAG is a P-Channel MOSFET manufactured by On Semiconductor. It is rated for a drain-to-source voltage of -40V and a continuous drain current of 11.3A at 25°C. The device has a maximum power dissipation of 61W at 25°C and an operating temperature range from -55°C to 175°C. It features a Rds On maximum of 13.8mOhm at 15A and 10V, with a gate charge of 26.5nC at 10V. The input capacitance is 1734pF at 20V, and the device is built in an 8-PowerWDFN package suitable for surface mounting. It is designed for power switching and load control in electronic circuits, with considerations for thermal management and electrical performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40 V
8-PowerWDFN
-55°C to 175°C