| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
37,500 pcs
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37500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from ON Semiconductor, part number NVTFWS010N10MCLTAG, is designed for power applications. It features a maximum drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 11.7A at ambient temperature (Ta) and 57.8A at case temperature (Tc).
The MOSFET has a low on-resistance (Rds On) of 10.6mOhm at 15A and 10V gate-source voltage. It operates within a wide temperature range of -55°C to 175°C (TJ).
Packaged in an 8-PowerWDFN (3.3x3.3mm) surface mount package, this component is suitable for space-constrained designs. The NVTFWS010N10MCLTAG utilizes MOSFET (Metal Oxide) technology and requires a drive voltage between 4.5V and 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 100 V.
The maximum gate to source voltage (Vgs) is ±20V.
The on-resistance (Rds On) is 10.6mOhm.
The continuous drain current at Ta is 11.7A.
It comes in an 8-PowerWDFN package measuring 3.3x3.3mm.
The operating temperature range is -55°C to 175°C.
Yes, it is RoHS3 compliant.