| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from On Semiconductor, part number NVTFWS008N04CTAG, is designed for efficient power management. It features a drain-to-source voltage (Vdss) of 40V and can handle a continuous drain current of up to 48A at 25°C case temperature, with a lower rating of 14A at 25°C ambient temperature.
The MOSFET exhibits a low on-resistance (Rds(on)) of 8.5mOhm at 15A and 10V gate-source voltage, minimizing conduction losses. Its gate charge (Qg) is 10nC at 10V, and input capacitance (Ciss) is 625pF at 25V, contributing to reduced driver losses.
Packaged in an 8-WDFN (3.3x3.3mm) surface-mount configuration with wettable flanks, this device is suitable for compact designs. It operates across a wide temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 3.1W (ambient) or 38W (case).
The device is AEC-Q101 qualified and RoHS compliant, making it suitable for demanding applications requiring high reliability and environmental consideration.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 40V.
The maximum continuous drain current is 48A when measured at the case temperature (Tc) of 25°C, and 14A when measured at the ambient temperature (Ta) of 25°C.
The maximum on-resistance is 8.5mOhm, measured at a drain current of 15A and a gate-source voltage of 10V.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in an 8-WDFN package with dimensions of 3.3x3.3mm.
Yes, the device is RoHS3 Compliant.