Mfr Part #:

NVTFWS004N04CTAG

The ON Semiconductor NVTFWS004N04CTAG is an N-Channel MOSFET with a 40V drain-to-source voltage. It offers a low on-resistance of 4.9mOhm at 35A and 10V gate drive.

✓ Total Stock: 7,500 pcs

$ Price Range: $0.38

NVTFWS004N04CTAG Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	7,500 pcs On Request	7500 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

NVTFWS004N04CTAG Description

Short technical summary and product information.

This N-Channel MOSFET from ON Semiconductor, part number NVTFWS004N04CTAG, is designed for power applications. It features a drain-to-source voltage of 40V and a maximum on-resistance of 4.9mOhm when driven at 10V and carrying 35A.

The device supports continuous drain currents of up to 77A under case temperature conditions and 18A under ambient temperature conditions. It operates within a wide temperature range of -55°C to 175°C.

Packaged in an 8-WDFN (3.3x3.3mm) surface-mount configuration, this MOSFET is suitable for compact designs. Its low RDS(on) minimizes conduction losses, and low capacitance helps reduce driver losses, making it an efficient choice for various power management circuits.

NVTFWS004N04CTAG Quick Information

Product Type: MOSFET

Canonical Name: NVTFWS004N04CTAG N-Channel MOSFET

Subcategory: N-Channel

NVTFWS004N04CTAG Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

NVTFWS004N04CTAG Estimated Pricing

Qty	Low	High
1+	$0.38	$0.38

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVTFWS004N04CTAG Features

40V drain-to-source voltage rating.
Low 4.9mOhm maximum on-resistance.
High 77A continuous drain current (Tc).
Wide -55°C to 175°C operating temperature.
Compact 8-WDFN surface-mount package.

NVTFWS004N04CTAG Applications

Suitable for power switching applications.
Efficient for low conduction loss designs.
Ideal for compact power management circuits.
Used in high-current switching circuits.

NVTFWS004N04CTAG FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage for the NVTFWS004N04CTAG?

The maximum drain-to-source voltage is 40V.

What is the maximum on-resistance of the NVTFWS004N04CTAG MOSFET?

The maximum on-resistance is 4.9mOhm at a gate-to-source voltage of 10V and a drain current of 35A.

What is the continuous drain current rating for the NVTFWS004N04CTAG?

The continuous drain current is rated at 77A when measured at the case temperature of 25°C, and 18A when measured at an ambient temperature of 25°C.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NVTFWS004N04CTAG MOSFET supplied in?

The MOSFET is supplied in an 8-WDFN (3.3x3.3mm) surface-mount package.

Is the NVTFWS004N04CTAG RoHS compliant?

Yes, the RoHS status is listed as RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NVTFWS004N04CTAG?

The Moisture Sensitivity Level is 1.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	77A (Tc)
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1150 pF @ 25 V
Lead Spacing	3.3 mm
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	55W (Tc)
Rds On (Max) @ Id, Vgs	4.9mOhm @ 35A, 10V
Supplier Device Package	8-WDFN (3.3x3.3)
Supplier Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 50µA