Mfr Part #:

NVTFS9D6P04M8LTAG

The ON Semiconductor NVTFS9D6P04M8LTAG is a P-Channel MOSFET designed for power applications. It offers a -40V drain-to-source voltage and a continuous drain current of up to 64A.

✓ Total Stock: 281,717 pcs

$ Price Range: $0.99

NVTFS9D6P04M8LTAG Available from 3 distributors

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	280,500 pcs On Request	280500 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,017 pcs On Request	1017 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	200 pcs On Request	200 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

NVTFS9D6P04M8LTAG Description

Short technical summary and product information.

The NVTFS9D6P04M8LTAG from ON Semiconductor is a P-Channel MOSFET designed for efficient power management. This device features a maximum drain-to-source voltage (Vdss) of -40V and a continuous drain current rating of -64A at 25°C case temperature, and -13A at 25°C ambient temperature.

With a low on-resistance of 9.5mOhm at 20A and 10Vgs, it minimizes conduction losses. The MOSFET operates within a wide temperature range of -55°C to +175°C. It is housed in a compact 8-WDFN (3.3x3.3mm) surface-mount package, suitable for space-constrained designs.

Key electrical characteristics include a gate-to-source voltage (Vgs) range of ±20V and a gate threshold voltage (Vgs(th)) of 2.4V at 580µA. Input capacitance (Ciss) is 2312pF at 20V, and gate charge (Qg) is 34.6nC at 10Vgs.

The device is AEC-Q101 qualified and RoHS compliant, making it suitable for automotive and industrial applications requiring high reliability and performance.

NVTFS9D6P04M8LTAG Quick Information

Product Type: MOSFET

Canonical Name: NVTFS9D6P04M8LTAG P-Channel MOSFET

Subcategory: Single

NVTFS9D6P04M8LTAG Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

NVTFS9D6P04M8LTAG Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVTFS9D6P04M8LTAG Features

P-Channel MOSFET with -40V drain-to-source voltage.
High continuous drain current rating of 64A.
Low on-resistance of 9.5mOhm at 10Vgs.
Compact 8-WDFN surface-mount package.
Wide operating temperature range from -55°C to +175°C.

NVTFS9D6P04M8LTAG Applications

Ideal for power switching applications.
Suitable for high-current DC-DC converters.
Used in battery management systems.
Applicable in load switch circuits.

NVTFS9D6P04M8LTAG FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage for the NVTFS9D6P04M8LTAG?

-40 V

What is the continuous drain current of the NVTFS9D6P04M8LTAG at 25°C case temperature?

-64 A

What is the maximum on-resistance for the NVTFS9D6P04M8LTAG?

9.5 mOhm

What is the operating temperature range for this MOSFET?

-55°C ~ 175°C

What type of package is the NVTFS9D6P04M8LTAG MOSFET in?

8-PowerWDFN

Is the NVTFS9D6P04M8LTAG RoHS compliant?

Yes, it is RoHS3 Compliant.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	13A (Ta), 64A (Tc)
Drain to Source Voltage (Vdss)	-40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	34.6 nC @ 10 V
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	2312 pF @ 20 V
Lead Spacing	3.3 mm
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	75W (Tc)
Rds On (Max) @ Id, Vgs	9.5mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Supplier Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.4V @ 580µA