NVTFS6H888NTAG The On Semiconductor NVTFS6H888NTAG is an N-Channel Power MOSFET designed for efficient power management. It features an 80V drain-source voltage and a low on-state resistance.
Mfr Part #:

NVTFS6H888NTAG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVTFS6H888NTAG is an N-Channel Power MOSFET designed for efficient power management. It features an 80V drain-source voltage and a low on-state resistance.
✓ Total Stock: 16,500 pcs
$ Price Range: $0.99

NVTFS6H888NTAG Available from 1 distributor

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✓ Non-Authorised
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NVTFS6H888NTAG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVTFS6H888NTAG Description

Short technical summary and product information.

The NVTFS6H888NTAG from On Semiconductor is a single N-Channel Power MOSFET designed for compact and efficient applications. It boasts a drain-to-source voltage (Vds) of 80V and a maximum continuous drain current (Id) of 12A at the case temperature, and 4.7A at ambient temperature.

 

This MOSFET offers a low on-state resistance (Rds(on)) of 55mOhm at 5A and 10V gate-source voltage, minimizing conduction losses. Key electrical characteristics include a gate charge (Qg) of 4.7 nC at 10V and an input capacitance (Ciss) of 220 pF at 40V.

 

The device operates within a wide temperature range of -55°C to 175°C. It is housed in a small 8-WDFN (3.3x3.3 mm) surface-mount package, making it suitable for space-constrained designs. The NVTFS6H888NTAG is AEC-Q101 qualified and PPAP capable, indicating its suitability for demanding automotive and industrial applications.

NVTFS6H888NTAG Quick Information

Product Type: MOSFET
Series: NVTFS6H888NTAG
Canonical Name: N-Channel Power MOSFET
Subcategory: Single

NVTFS6H888NTAG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVTFS6H888NTAG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVTFS6H888NTAG Features

  • 80V drain-source voltage rating.
  • Low 55mOhm on-state resistance.
  • Handles up to 12A continuous current.
  • Compact 8-WDFN surface-mount package.
  • AEC-Q101 qualified for reliability.

NVTFS6H888NTAG Applications

  • Suitable for power switching applications.
  • Ideal for compact electronic designs.
  • Used in automotive systems.
  • Efficient conduction loss management.

NVTFS6H888NTAG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVTFS6H888NTAG MOSFET?

The drain-to-source voltage (Vds) is 80V.

What is the maximum continuous drain current for the NVTFS6H888NTAG?

The maximum continuous drain current is 12A at the case temperature and 4.7A at ambient temperature.

What is the on-state resistance (Rds(on)) of this MOSFET?

The Rds(on) is a maximum of 55mOhm when tested at 5A drain current and 10V gate-source voltage.

What is the operating temperature range for the NVTFS6H888NTAG?

The operating junction temperature range is -55°C to 175°C.

What package type is the NVTFS6H888NTAG supplied in?

It is supplied in an 8-WDFN (3.3x3.3 mm) surface-mount package.

Is the NVTFS6H888NTAG RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level is 1 Unlimited.

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