| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from On Semiconductor, part number NVTFS6H880NWFTAG, is designed for power applications requiring high efficiency and a compact footprint. It offers a drain-to-source voltage of 80V and a maximum on-resistance of 32mOhm at 5A and 10V gate drive.
The device supports continuous drain currents of 6.3A at ambient temperature and 21A at case temperature (25°C). It operates within a junction temperature range of -55°C to +175°C. The MOSFET is housed in an 8-WDFN (3.3x3.3 mm) surface mount package, making it suitable for space-constrained designs.
Key electrical characteristics include an input capacitance of 370pF at 40V and a gate charge of 6.9nC at 10V. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications. It is also Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 80V.
The maximum on-resistance is 32mOhm at 5A drain current and 10V gate-source voltage.
The continuous drain current is 6.3A at ambient temperature and 21A at case temperature (25°C).
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in an 8-WDFN (3.3x3.3 mm) package.
Yes, the device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.