| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVTFS6H880NTAG from ON Semiconductor is a single N-Channel MOSFET designed for power applications. It features a maximum drain-to-source voltage (Vds) of 80V and a low on-resistance (Rds(on)) of 32mOhm at a gate-source voltage (Vgs) of 10V. The device can handle a continuous drain current of up to 21A at case temperature and 6.3A at ambient temperature.
With a gate-to-source voltage range of ±20V and a gate threshold voltage of 4V, this MOSFET is suitable for various switching applications. It offers a maximum power dissipation of 31W when the case temperature is 25°C. The input capacitance (Ciss) is 370 pF at 40V, and the gate charge (Qg) is 6.9 nC at 10V.
The NVTFS6H880NTAG is housed in an 8-WDFN (3.3x3.3 mm) surface-mount package, making it suitable for compact designs. It operates within a temperature range of -55°C to 175°C. The device is AEC-Q101 qualified and RoHS compliant, indicating its suitability for demanding automotive and industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) is 80V.
The maximum on-resistance (Rds(on)) is 32mOhm at 5A drain current and 10V gate-source voltage.
The continuous drain current is 21A when measured at the case temperature and 6.3A when measured at the ambient temperature.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in an 8-PowerWDFN package.
Yes, the device is Pb-Free and RoHS Compliant.