| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This N-Channel MOSFET from On Semiconductor, part number NVTFS6H880NLWFTAG, is designed for power applications requiring high efficiency and a compact footprint. It features a drain-to-source voltage (Vdss) of 80V and a maximum on-resistance (Rds(on)) of 29mOhm when tested at 5A drain current and 10V gate-to-source voltage.
The device supports a continuous drain current of up to 22A under specific temperature conditions (Tc = 25°C) and 6.6A at ambient temperature (Ta = 25°C). Power dissipation is rated at 33W (Tc = 25°C) and 3.1W (Ta = 25°C). The operating temperature range spans from -55°C to +175°C.
Packaged in an 8-WDFN (3.3x3.3mm) surface-mount configuration, this MOSFET is suitable for designs where space is a constraint. It is AEC-Q101 qualified and RoHS compliant, indicating suitability for automotive and general industrial applications demanding reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NVTFS6H880NLWFTAG is 80V.
The maximum on-resistance (Rds(on)) is 29mOhm at a test condition of 5A drain current and 10V gate-to-source voltage.
The continuous drain current is 22A at 25°C case temperature and 6.6A at 25°C ambient temperature.
The operating temperature range is -55°C to +175°C.
The NVTFS6H880NLWFTAG is in an 8-WDFN (3.3x3.3mm) surface-mount package.
Yes, the NVTFS6H880NLWFTAG is RoHS3 Compliant.