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NVTFS6H860NLWFTAG The NVTFS6H860NLWFTAG is an N-Channel MOSFET from On Semiconductor. It offers 80V drain-to-source voltage and high current capabilities.
Mfr Part #:

NVTFS6H860NLWFTAG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVTFS6H860NLWFTAG is an N-Channel MOSFET from On Semiconductor. It offers 80V drain-to-source voltage and high current capabilities.
✓ Total Stock: 282,000 pcs
$ Price Range: $0.99

NVTFS6H860NLWFTAG Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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282,000 pcs
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NVTFS6H860NLWFTAG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NVTFS6H860NLWFTAG Description

Short technical summary and product information.

This N-Channel MOSFET, part number NVTFS6H860NLWFTAG from On Semiconductor, is designed for power applications. It features a maximum drain-to-source voltage of 80V and can handle a continuous drain current of up to 30A at 25°C case temperature, or 8.1A at 25°C ambient temperature.

 

The MOSFET boasts a low Rds(on) of 20mOhm at 5A and 10V Vgs, minimizing conduction losses. It also has a low input capacitance and gate charge, which helps reduce driver losses. The device operates within a wide temperature range of -55°C to 175°C.

 

Packaged in an 8-WDFN (3.3x3.3mm) surface-mount package, the NVTFS6H860NLWFTAG is suitable for compact designs. It is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and demanding applications. The device is also Pb-Free and RoHS Compliant.

NVTFS6H860NLWFTAG Quick Information

Product Type: MOSFET
Series: NVTFS6H860NLWFTAG
Canonical Name: NVTFS6H860NLWFTAG N-Channel MOSFET

NVTFS6H860NLWFTAG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVTFS6H860NLWFTAG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVTFS6H860NLWFTAG Features

  • 80V drain-to-source voltage rating.
  • 30A continuous drain current capability.
  • Low 20mOhm Rds(on) at 10V Vgs.
  • Compact 8-WDFN 3.3x3.3mm package.
  • AEC-Q101 qualified for reliability.

NVTFS6H860NLWFTAG Applications

  • Suitable for power switching applications.
  • Ideal for compact electronic designs.
  • Used in automotive systems.
  • Enables efficient power management.

NVTFS6H860NLWFTAG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVTFS6H860NLWFTAG?

The maximum drain-to-source voltage (Vds) is 80V.

What is the continuous drain current rating?

The continuous drain current is 30A when measured at the case temperature (Tc) of 25°C, and 8.1A when measured at the ambient temperature (Ta) of 25°C.

What is the maximum Rds(on) for this MOSFET?

The maximum Rds(on) is 20mOhm at a drain current of 5A and gate-source voltage of 10V.

What is the operating temperature range?

The operating junction and storage temperature range is from -55°C to 175°C.

What package type is the NVTFS6H860NLWFTAG in?

It is in an 8-WDFN (3.3x3.3mm) surface mount package.

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