NVTFS6H854NTAG The On Semiconductor NVTFS6H854NTAG is an N-Channel MOSFET designed for power applications. It features a voltage rating of 80V and a low on-resistance of 14.5mOhm.
Mfr Part #:

NVTFS6H854NTAG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVTFS6H854NTAG is an N-Channel MOSFET designed for power applications. It features a voltage rating of 80V and a low on-resistance of 14.5mOhm.
✓ Total Stock: 7,500 pcs
$ Price Range: $0.99

NVTFS6H854NTAG Available from 1 distributor

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NVTFS6H854NTAG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVTFS6H854NTAG Description

Short technical summary and product information.

The NVTFS6H854NTAG from On Semiconductor is a high-performance N-Channel MOSFET. It is designed for applications requiring efficient power switching, offering a drain-to-source voltage (Vds) of 80V and a maximum continuous drain current of 44A at case temperature.

 

Key electrical characteristics include a low on-resistance (Rds(on)) of 14.5mOhm at 10A and 10V gate drive, minimizing conduction losses. The device also features a gate-to-source voltage (Vgs) range of ±20V and a gate charge (Qg) of 13nC at 10V, contributing to efficient driver performance.

 

This MOSFET is housed in a compact 8-WDFN (3.3x3.3 mm) surface-mount package, suitable for space-constrained designs. It operates within a wide temperature range of -55°C to 175°C (TJ). The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and demanding industrial applications. It is also Pb-free and RoHS compliant.

NVTFS6H854NTAG Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET
Subcategory: N-Channel

NVTFS6H854NTAG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NVTFS6H854NTAG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVTFS6H854NTAG Features

  • 80V drain-to-source voltage rating.
  • Low 14.5mOhm on-resistance.
  • High 44A continuous drain current.
  • Compact 8-WDFN surface-mount package.
  • AEC-Q101 qualified for automotive use.

NVTFS6H854NTAG Applications

  • Ideal for power switching circuits.
  • Suitable for automotive applications.
  • Used in compact electronic designs.
  • Efficient conduction loss minimization.

NVTFS6H854NTAG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVTFS6H854NTAG MOSFET?

The drain-to-source voltage (Vds) is 80V.

What is the maximum on-resistance for the NVTFS6H854NTAG?

The maximum on-resistance (Rds On) is 14.5mOhm at 10A drain current and 10V gate-to-source voltage.

What is the continuous drain current rating?

The continuous drain current is 44A when measured at the case temperature (Tc) and 9.5A when measured at the ambient temperature (Ta).

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVTFS6H854NTAG MOSFET supplied in?

It is supplied in an 8-WDFN (3.3x3.3mm) surface-mount package.

Is the NVTFS6H854NTAG MOSFET RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level is 1.

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