NVTFS6H850NLTAG The ON Semiconductor NVTFS6H850NLTAG is an N-Channel MOSFET designed for power applications. It offers a drain-source voltage of 80V and a continuous drain current of up to 64A.
Mfr Part #:

NVTFS6H850NLTAG

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVTFS6H850NLTAG is an N-Channel MOSFET designed for power applications. It offers a drain-source voltage of 80V and a continuous drain current of up to 64A.
✓ Total Stock: 11,849 pcs
$ Price Range: $0.99

NVTFS6H850NLTAG Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,500 pcs
7500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,349 pcs
4349 pcs On Request 1 On Request On Request On Request On Request On Request

NVTFS6H850NLTAG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVTFS6H850NLTAG Description

Short technical summary and product information.

The NVTFS6H850NLTAG is an N-Channel MOSFET from ON Semiconductor, designed for efficient power management. This device features a maximum drain-to-source voltage (Vdss) of 80V and can handle a continuous drain current of up to 64A at a case temperature of 25°C, or 14.8A at an ambient temperature of 25°C.

 

With a low on-resistance of 8.6mOhm at 10A and 10V, the NVTFS6H850NLTAG minimizes conduction losses, contributing to higher system efficiency. It also boasts low input capacitance and gate charge, which helps reduce driver losses.

 

The MOSFET is housed in a compact 8-WDFN (3.3x3.3mm) surface-mount package, suitable for designs where space is a constraint. The operating temperature range is -55°C to 175°C (TJ), and it is AEC-Q101 qualified and PPAP capable, indicating its suitability for demanding automotive applications. The device is Pb-Free and RoHS Compliant.

NVTFS6H850NLTAG Quick Information

Product Type: MOSFET
Series: NVTFS6H850NLTAG
Canonical Name: N-Channel MOSFET
Subcategory: N-Channel

NVTFS6H850NLTAG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NVTFS6H850NLTAG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVTFS6H850NLTAG Features

  • 80V drain-to-source voltage rating.
  • 64A maximum continuous drain current.
  • Low 8.6mOhm Rds On at 10A, 10V.
  • Compact 8-WDFN (3.3x3.3mm) package.
  • AEC-Q101 qualified for automotive use.

NVTFS6H850NLTAG Applications

  • Suitable for power switching circuits.
  • Efficient for low conduction loss designs.
  • Used in space-constrained applications.
  • Ideal for automotive power management.

NVTFS6H850NLTAG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVTFS6H850NLTAG?

The maximum drain-to-source voltage is 80V.

What is the continuous drain current rating?

The continuous drain current is 64A at TC=25°C and 14.8A at TA=25°C.

What is the maximum on-resistance (Rds On)?

The maximum Rds On is 8.6mOhm at 10A, 10V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package type is the NVTFS6H850NLTAG supplied in?

It is supplied in an 8-WDFN (3.3x3.3mm) surface-mount package.

Is this MOSFET AEC-Q101 qualified?

Yes, the NVTFS6H850NLTAG is AEC-Q101 qualified.

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