| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13,500 pcs
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13500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from ON Semiconductor, part number NVTFS5C454NLWFTAG, is designed for power applications requiring high efficiency and compact size. It boasts a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 85A at a case temperature of 25°C.
The MOSFET offers a low on-resistance (Rds On) of 4mOhm at 20A and 10V gate-source voltage, minimizing conduction losses. Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2.2V at 250µA, an input capacitance (Ciss) of 1600pF at 25V, and a gate charge (Qg) of 8.2nC at 4.5V.
With a maximum power dissipation of 55W at 25°C case temperature and an operating temperature range of -55°C to 175°C, this device is suitable for demanding environments. It is housed in an 8-WDFN package with surface mount type, measuring 3.3x3.3mm, making it ideal for space-constrained designs.
The NVTFS5C454NLWFTAG is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications. It is also Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 40V.
The maximum continuous drain current is 85A at a case temperature of 25°C.
The on-resistance (Rds On) is a maximum of 4mOhm at 20A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to +175°C.
It is in an 8-WDFN package with a surface mount type.
Yes, this device is Pb-Free and RoHS Compliant.