| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,500 pcs
|
28500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,124 pcs
|
1124 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVTFS5C453NLWFTAG is a single N-Channel MOSFET from On Semiconductor, designed for efficient power management. It boasts a 40V drain-to-source voltage (Vdss) and a high continuous drain current capability of 107A at 25°C case temperature.
This MOSFET offers a low on-resistance of 3.1mOhm at 10V gate-to-source voltage, minimizing conduction losses. It operates within a wide temperature range of -55°C to 175°C and features a compact 8-WDFN (3.3x3.3mm) package suitable for space-constrained designs.
Key electrical characteristics include a gate threshold voltage of 2V at 250µA and an input capacitance of 2100pF at 25V. The device is AEC-Q101 qualified and RoHS compliant, making it suitable for demanding applications.
Mounting is via surface mount technology. The NVTFS5C453NLWFTAG is designed to minimize driver and conduction losses, contributing to overall system efficiency.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.80 | $0.80 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 40V.
The continuous drain current (Id) is 107A at a case temperature of 25°C.
The on-resistance (Rds(on)) is a maximum of 3.1mOhm at 40A drain current and 10V gate-to-source voltage.
The operating junction and storage temperature range is -55°C to 175°C.
This MOSFET is supplied in an 8-WDFN package with a 3.3x3.3mm footprint.
Yes, this device is RoHS3 Compliant.