Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	37A (Tc)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	850 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	3.2W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs	20.5mOhm @ 10A, 10V
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

NVTFS5824NLTWG

NVTFS5824NLTWG Specifications Quick View