| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,420 pcs
|
1420 pcs | On Request | 1 | On Request | On Request | 1634+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NVTFS5820NLWFTWG is a single N-Channel Power MOSFET. It features a drain-to-source voltage (Vdss) of 60V and a maximum continuous drain current of 11A at 25°C ambient temperature. The device boasts a low on-resistance (Rds(on)) of 11.5mOhm at 8.7A and 10V Vgs, minimizing conduction losses. Its gate charge (Qg) is 28nC at 10V Vgs, contributing to reduced driver losses.
This MOSFET is housed in a compact 8-WDFN package measuring 3.3x3.3mm, suitable for space-constrained designs. It operates across a wide temperature range from -55°C to 175°C (TJ). The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications. It is also Pb-Free and RoHS Compliant.
Key electrical characteristics include an input capacitance (Ciss) of 1462pF at 25V and a gate threshold voltage (Vgs(th)) of 2.3V at 250µA. Power dissipation is rated at 3.2W (Ta) and 21W (Tc). The NVTFS5820NLWFTWG is designed for applications requiring efficient switching and low conduction losses.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 60V.
The Rds(on) is a maximum of 11.5mOhm at 8.7A and 10V Vgs.
The device is supplied in an 8-WDFN package with dimensions of 3.3x3.3mm.
The operating junction and storage temperature range is -55°C to 175°C.
Yes, the device is RoHS Compliant.