NVTFS5820NLTAG The ON Semiconductor NVTFS5820NLTAG is an N-Channel Power MOSFET with a 60V drain-to-source voltage. It features a low Rds(on) of 11.5mOhm at 10V Vgs and a continuous drain current of 11A.
Mfr Part #:

NVTFS5820NLTAG

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVTFS5820NLTAG is an N-Channel Power MOSFET with a 60V drain-to-source voltage. It features a low Rds(on) of 11.5mOhm at 10V Vgs and a continuous drain current of 11A.
✓ Total Stock: 6,542 pcs
$ Price Range: $0.99

NVTFS5820NLTAG Available from 2 distributors

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✓ Non-Authorised
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Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
542 pcs
542 pcs On Request 1 On Request On Request 20+ On Request On Request

NVTFS5820NLTAG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVTFS5820NLTAG Description

Short technical summary and product information.

This N-Channel Power MOSFET from ON Semiconductor, part number NVTFS5820NLTAG, is designed for efficient power management applications. It offers a drain-to-source voltage (Vds) of 60V and a low on-resistance (Rds(on)) of 11.5mOhm when tested at 8.7A and 10V Vgs. The device can handle a continuous drain current (Id) of up to 11A under typical ambient conditions.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2.3V at 250µA, a maximum gate-to-source voltage (Vgs) of ±20V, and an input capacitance (Ciss) of 1462pF at 25V. The MOSFET operates within a wide temperature range of -55°C to 175°C.

 

Packaged in an 8-WDFN (3.3x3.3 mm) surface-mount configuration, the NVTFS5820NLTAG is suitable for compact designs. It has a maximum power dissipation of 3.2W at 25°C ambient temperature and 21W at 25°C case temperature. The device is Pb-Free and RoHS3 compliant, with an MSL rating of 1.

NVTFS5820NLTAG Quick Information

Product Type: Power MOSFET
Series: NVTFS5820NLTAG
Canonical Name: NVTFS5820NLTAG N-Channel Power MOSFET
Subcategory: N-Channel

NVTFS5820NLTAG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NVTFS5820NLTAG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVTFS5820NLTAG Features

  • 60V drain-to-source voltage rating.
  • Low Rds(on) of 11.5mOhm at 10V Vgs.
  • 11A continuous drain current capability.
  • Compact 8-WDFN surface mount package.
  • Operates from -55°C to 175°C.

NVTFS5820NLTAG Applications

  • Ideal for power switching circuits.
  • Suitable for DC-DC converters.
  • Used in battery management systems.
  • Applicable in load switch designs.

NVTFS5820NLTAG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NVTFS5820NLTAG MOSFET?

The drain-to-source voltage (Vds) is 60V.

What is the maximum on-resistance of the NVTFS5820NLTAG?

The maximum on-resistance is 11.5mOhm at 8.7A and 10V Vgs.

What is the continuous drain current for the NVTFS5820NLTAG?

The continuous drain current is 11A at Ta = 25°C.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C.

What package type is the NVTFS5820NLTAG MOSFET in?

It is in an 8-WDFN (3.3x3.3 mm) surface mount package.

Is the NVTFS5820NLTAG RoHS compliant?

Yes, it is RoHS3 Compliant.

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