| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,946 pcs
|
2946 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVTFS5811NLWFTAG is a single N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 16A at 25°C ambient temperature. The MOSFET exhibits a low on-resistance (Rds(on)) of 6.7mOhm at a gate-source voltage (Vgs) of 10V, minimizing conduction losses.
This device is housed in an 8-PowerWDFN surface mount package with dimensions of 3.3x3.3mm, making it suitable for compact designs. The operating temperature range is -55°C to 175°C (TJ). Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2.2V at 250µA, input capacitance (Ciss) of 1570pF at 25V, and gate charge (Qg) of 30nC at 10V.
The NVTFS5811NLWFTAG is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications. It is also Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 40 V.
The operating junction and storage temperature range is -55°C to +175°C.
The package type is 8-PowerWDFN.
Yes, the RoHS status is RoHS3 Compliant.