| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
64,501 pcs
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64501 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from On Semiconductor, part number NVTFS4C25NWFTAG, is designed for power applications requiring efficient switching and minimal conduction losses. It features a maximum drain-source voltage (Vds) of 30V and a low on-resistance (Rds On) of 17mOhm at 10A and 10V.
The device offers a continuous drain current of 10.1A when measured at the ambient temperature (Ta) and 22.1A when measured at the case temperature (Tc), both at 25°C. Its gate charge (Qg) is optimized to minimize driver losses, with a typical value of 10.3 nC at 10V.
Packaged in an 8-WDFN (3.3x3.3mm) surface-mount package, this MOSFET is suitable for space-constrained designs. It operates across a wide temperature range of -55°C to 175°C (TJ). The NVTFS4C25NWFTAG is Pb-Free and Halogen Free, aligning with environmental compliance standards.
Key electrical characteristics include a gate-to-source voltage (Vgs) range of ±20V and a gate threshold voltage (Vgs(th)) of 2.2V at 250µA. The input capacitance (Ciss) is rated at a maximum of 500pF at 15V. This MOSFET is designed for applications where low conduction and switching losses are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) is 30V.
The Rds On is a maximum of 17mOhm at 10A and 10V.
The continuous drain current is 10.1A at 25°C ambient and 22.1A at 25°C case temperature.
The operating junction and storage temperature range is -55°C to +175°C.
It is an N-Channel MOSFET.
It is supplied in an 8-WDFN (3.3x3.3mm) package.