| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
210,000 pcs
|
210000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,778 pcs
|
2778 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
1,077 pcs
|
1077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVTFS4C13NWFTAG is an N-Channel MOSFET from ON Semiconductor designed for power applications. It offers a drain-to-source voltage (Vds) of 30V and a continuous drain current (Id) of 14A at 25°C ambient temperature. The MOSFET exhibits a low on-resistance of 9.4mOhm at 30A and 10V gate-source voltage, minimizing conduction losses. Its optimized gate charge minimizes switching losses, contributing to overall efficiency.
This device operates within a junction temperature range of -55°C to 175°C. It is packaged in an 8-WDFN (3.3x3.3mm) surface-mount package, suitable for space-constrained designs. The NVTFS4C13NWFTAG is Pb-Free, Halogen Free, and RoHS Compliant, making it suitable for environmentally conscious applications. Its features include low RDS(on), low capacitance, and optimized gate charge for efficient power management.
Key electrical characteristics include a gate-to-source voltage of ±20V and a gate threshold voltage of 2.1V at 250µA. Input capacitance is rated at 770pF at 15V, and gate charge is 15.2nC at 10V. Thermal performance is supported by a junction-to-case thermal resistance of 5.8°C/W and a junction-to-ambient thermal resistance of 50°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) is 30V.
The continuous drain current (Id) is 14A at 25°C ambient temperature.
The on-resistance (Rds(on)) is a maximum of 9.4mOhm at 30A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to 175°C.
It is supplied in an 8-PowerWDFN package, specifically 8-WDFN (3.3x3.3mm).
Yes, the device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.