| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
451,020 pcs
|
451020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,800 pcs
|
1800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVTFS4C08NTWG from ON Semiconductor is a single N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 17A at 25°C ambient temperature, with a higher rating of 55A under case temperature conditions. The device boasts a low on-resistance (Rds(on)) of 5.9mOhm at 10V gate-source voltage and 30A drain current, minimizing conduction losses. Its optimized gate charge (Qg) and low capacitance contribute to reduced driver and switching losses.
This MOSFET operates within a wide temperature range of -55°C to 175°C (TJ). It is housed in an 8-PowerWDFN surface mount package, measuring 3.3x3.3mm, suitable for compact designs. The device is Pb-free and halogen-free, complying with RoHS standards. Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2.2V at 250µA and a maximum gate-to-source voltage (Vgs) of ±20V. Thermal performance is supported by a junction-to-case thermal resistance of 4.9°C/W and a junction-to-ambient thermal resistance of 48°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30 V.
The continuous drain current is 17 A at 25°C ambient temperature and 55 A at 25°C case temperature.
The maximum Rds(on) is 5.9 mOhm when the drain current is 30A and the gate-source voltage is 10V.
The operating junction and storage temperature range is -55°C to +175°C.
It is in an 8-PowerWDFN package, suitable for surface mounting.
Yes, this device is Pb-Free and Halogen Free, and is RoHS Compliant.