| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVTFS4C06NTAG is a power MOSFET from ON Semiconductor designed for efficient power management applications. This N-channel device offers a drain-source voltage (Vdss) of 30V and a low on-resistance (Rds On) of 4.2mOhm at a gate-source voltage (Vgs) of 10V, minimizing conduction losses.
Key electrical characteristics include a continuous drain current of 21A (Ta) and a maximum gate charge (Qg) of 26nC at 10V, optimizing driver efficiency. The MOSFET operates within a wide temperature range of -55°C to 175°C (TJ).
Packaged in an 8-WDFN (3.3x3.3) surface-mount configuration, the NVTFS4C06NTAG is suitable for space-constrained designs. It is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, meeting environmental standards for various applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The maximum Rds On is 4.2mOhm at 30A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in an 8-WDFN (3.3x3.3) package.
Yes, the device is RoHS3 Compliant.