| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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25,500 pcs
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25500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVTFS052P04M8LTAG from On Semiconductor is a P-Channel MOSFET designed for power applications. It features a drain-to-source voltage (Vdss) of -40V and a maximum continuous drain current of 4.7A at 25°C ambient temperature, increasing to 13.2A at 25°C case temperature.
This MOSFET boasts a low on-resistance (Rds(on)) of 69mOhm at 5A and 10V gate-to-source voltage, minimizing conduction losses. It also has a gate threshold voltage (Vgs(th)) of 2.4V at 95µA and a gate-to-source voltage range of ±20V. The input capacitance (Ciss) is 424pF at 20V, and the gate charge (Qg) is 6.3nC at 10V.
With a power dissipation rating of 2.9W at 25°C ambient and 23W at 25°C case temperature, it is suitable for various power management tasks. The device operates within a junction and storage temperature range of -55°C to +175°C.
The NVTFS052P04M8LTAG is housed in an 8-WDFN (3.3x3.3 mm) surface-mount package, designed for compact applications. It is AEC-Q101 qualified and RoHS compliant, indicating suitability for automotive and general industrial use where reliability is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NVTFS052P04M8LTAG is -40V.
The maximum continuous drain current at 25°C case temperature is -13.2A.
The on-resistance (Rds(on)) is a maximum of 69mOhm at 5A and 10V gate-to-source voltage.
The operating junction and storage temperature range is -55°C to +175°C.
This MOSFET is supplied in an 8-WDFN (3.3x3.3mm) surface-mount package.
The product is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1.