| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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19,500 pcs
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19500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NVTFS016N06CTAG is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 60V and can handle a continuous drain current of 8A under ambient conditions and 32A under case conditions. The on-resistance (Rds On) is specified as a maximum of 16.3mOhm at 5A and 10V gate-source voltage.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ). Key electrical characteristics include a gate charge (Qg) of 6.9 nC (max) at 10V and an input capacitance (Ciss) of 489 pF (max) at 30V. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 25µA, with a maximum gate-source voltage (Vgs) of ±20V.
The device utilizes MOSFET (Metal Oxide) technology and is housed in an 8-PowerWDFN package, measuring 3.3x3.3mm. It is designed for surface mounting, making it suitable for compact PCB designs. The maximum power dissipation is 2.5W (Ta) and 36W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the NVTFS016N06CTAG is 60V.
The continuous drain current is rated at 8A under ambient conditions (Ta) and 32A under case conditions (Tc).
The maximum on-resistance (Rds On) is 16.3mOhm when measured at 5A drain current and 10V gate-source voltage.
This MOSFET can operate between -55°C and 175°C (TJ).
It comes in an 8-PowerWDFN package, specifically an 8-WDFN (3.3x3.3mm) for surface mounting.
The RoHS status is listed as RoHS3 Compliant.
The Moisture Sensitivity Level is 1.