| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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13 pcs
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13 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This N-Channel MOSFET from On Semiconductor, part number NVTFS010N10MCLTAG, is suitable for various power switching applications. It features a maximum drain-to-source voltage of 100V and a low on-resistance of 10.6mOhm at 15A and 10V.
The device supports a continuous drain current of 11.7A when measured at ambient temperature (Ta) and 57.8A at case temperature (Tc) of 25°C. It operates within a wide temperature range of -55°C to 175°C.
Packaged in an 8-WDFN (3.3x3.3mm) surface-mount configuration, this MOSFET is designed for compact applications. It boasts features like low conduction losses due to its low RDS(on) and minimized driver losses due to low capacitance. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and demanding industrial environments. It is also Pb-Free and RoHS Compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 100V.
The maximum on-resistance is 10.6mOhm at 15A and 10V.
The continuous drain current is 11.7A at 25°C ambient and 57.8A at 25°C case temperature.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in an 8-WDFN (3.3x3.3mm) surface-mount package.
Yes, the device is RoHS3 Compliant.