| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13,500 pcs
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13500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The On Semiconductor NVTFS004N04CTAG is an N-Channel MOSFET belonging to the discrete semiconductor product category. This power MOSFET features a drain-to-source voltage (Vds) of 40V and a low on-resistance (Rds(on)) of 4.9mOhm at a gate-to-source voltage (Vgs) of 10V and a drain current (Id) of 35A.
It supports a continuous drain current of 18A when measured at ambient temperature (Ta) and 77A when measured at case temperature (Tc). The maximum power dissipation is rated at 3.2W at Ta=25°C and 55W at Tc=25°C. The device operates within a wide temperature range of -55°C to 175°C.
Packaged in an 8-WDFN (3.3x3.3mm) surface-mount configuration, this MOSFET is suitable for compact designs. It also features a gate charge of 18nC at 10V and an input capacitance of 1150pF at 25V. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications. It is also RoHS compliant and Pb-free.
Key electrical characteristics include a gate-to-source voltage (Vgs) of ±20V and a gate threshold voltage (Vgs(th)) of 3.5V at 50µA. The datasheet provides detailed thermal resistance values, including junction-to-case at 2.7°C/W and junction-to-ambient at 47.4°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) is 40V.
The on-resistance (Rds(on)) is a maximum of 4.9mOhm at 35A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in an 8-WDFN (3.3x3.3mm) package.
Yes, the RoHS status is RoHS3 Compliant.