| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVTFS003N04CTAG is an N-Channel MOSFET from ON Semiconductor designed for power applications. It features a maximum drain-to-source voltage (Vdss) of 40V and a low on-resistance of 3.5mOhm at a gate-to-source voltage of 10V and drain current of 50A.
This MOSFET can handle a continuous drain current of up to 103A when the case temperature is 25°C, and 22A when the ambient temperature is 25°C. Power dissipation is rated at 69W (Tc=25°C) and 3.2W (Ta=25°C). The operating temperature range is -55°C to +175°C.
It is housed in an 8-WDFN (3.3x3.3 mm) package, suitable for surface mounting. Key electrical characteristics include an input capacitance of 1600 pF and a gate charge of 23 nC.
The device is AEC-Q101 qualified and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 40V.
The maximum on-resistance (Rds(on)) is 3.5mOhm at a drain current of 50A and gate-source voltage of 10V.
The continuous drain current is 103A at a case temperature of 25°C and 22A at an ambient temperature of 25°C.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in an 8-WDFN (3.3x3.3 mm) package suitable for surface mounting.