| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,462 pcs
|
3462 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,462 pcs
|
3462 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
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| Channels per Circuit | |
| ESD Protection | |
| Features | |
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| Number of Circuits | |
| Operating Temperature | |
| Output Type | |
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| Supplier Device Package | |
| Translator Type | |
| Voltage |
The NXP Semiconductors NVT2006BQ,115 is a versatile bidirectional voltage level translator suitable for applications requiring seamless voltage translation between different logic levels without a direction pin. It supports open-drain and push-pull outputs, operating within a voltage range of 1 V to 3.6 V.
This translator offers 6 channels per circuit, simplifying designs that require multiple translation paths. Key features include auto-direction sensing, a low ON-state resistance of 3.5 Ω for minimal signal distortion, and a propagation delay of less than 1.5 ns. The device also provides robust ESD protection exceeding 3.5 kV HBM and 1000 V CDM.
Packaged in a 16-DHVQFN (2.5x3.5 mm) with an exposed pad, the NVT2006BQ,115 is designed for surface mounting. Its operating temperature range is -40°C to 85°C (TA), making it suitable for a variety of environmental conditions. The flow-through pinout aids in easier PCB trace routing.
This component is ideal for mixed-voltage systems where efficient and reliable level shifting is critical. Its design minimizes propagation delay and signal integrity issues, supporting transmission speeds up to 33 MHz in open-drain systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.12 | $0.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1 V to 3.6 V.
16-DHVQFN (2.5x3.5 mm) with exposed pad.
-40°C to 85°C.
6 channels.
Less than 1.5 ns.
3.5 Ω.
Exceeds 3.5 kV HBM and 1000 V CDM.