| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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120,000 pcs
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120000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NVT2001GMZ from NXP Semiconductors is a versatile bidirectional voltage level translator designed for open-drain and push-pull applications. It operates across a wide voltage range, supporting Vref(A) from 1.0 V to 3.6 V and Vref(B) from 1.8 V to 5.5 V, allowing seamless translation between 1.0 V and 5 V without requiring a direction pin.
This device features a single bidirectional channel with a low ON-state resistance of 3.5 Ω, minimizing signal distortion. It offers a maximum propagation delay of less than 1.5 ns, ensuring high-speed operation. The NVT2001GMZ also provides excellent ESD protection, exceeding 4 kV HBM and 1000 V CDM.
Designed for ease of PCB routing with a flow-through pinout, the NVT2001GMZ is available in a compact 6-XSON, SOT886 package. It is suitable for applications requiring mixed-mode signal operation and robust ESD protection for lower voltage devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.12 | $0.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The device operates from 1 V to 3.6 V on one side and 1.8 V to 5.5 V on the other side.
The package is 6-XSON (SOT886) with dimensions 1.45 mm x 1.0 mm, surface mount.
The operating temperature range is -40°C to 105°C (TA).
The translator supports both open-drain and push-pull output types.
The on-resistance between input and output ports is 3.5 Ω.
The propagation delay is less than 1.5 ns for push-pull operation, and the maximum data rate is 33 MHz for open-drain operation with a 50 pF load and 197 Ω pull-up resistor.
ESD protection exceeds 4 kV HBM (per JESD22-A114) and 1000 V CDM (per JESD22-C101).