NVS4001NT1G The ON Semiconductor NVS4001NT1G is an N-Channel MOSFET designed for surface mount applications. It features a 30V drain-source voltage and a continuous drain current of 270mA.
Mfr Part #:

NVS4001NT1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVS4001NT1G is an N-Channel MOSFET designed for surface mount applications. It features a 30V drain-source voltage and a continuous drain current of 270mA.
✓ Total Stock: 3,907 pcs
$ Price Range: $0.07

NVS4001NT1G Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 2112+ On Request On Request
Non-Authorised Inventory information
905 pcs
905 pcs On Request 1 On Request On Request On Request On Request On Request
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2 pcs
2 pcs On Request 1 On Request On Request 2112+ On Request On Request

NVS4001NT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVS4001NT1G Description

Short technical summary and product information.

The ON Semiconductor NVS4001NT1G is a single N-Channel MOSFET designed for surface mount applications. It offers a drain-source voltage (Vdss) of 30V and a continuous drain current of 270mA at ambient temperature. The device has a maximum power dissipation of 330mW.

 

Key electrical characteristics include a gate charge (Qg) of 1.3 nC at 5V and an input capacitance (Ciss) of 33 pF at 5V. The on-resistance (Rds On) is a maximum of 1.5 Ohm at 10mA and 4V, with a gate threshold voltage (Vgs(th)) of 1.5V at 100µA. The maximum gate-source voltage is ±20V.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It is packaged in an SC-70-3 (SOT-323) case, suitable for surface mounting. The technology used is MOSFET (Metal Oxide).

 

This component is suitable for various electronic circuits requiring a small-signal N-channel MOSFET with moderate voltage and current handling capabilities in a compact surface-mount package.

NVS4001NT1G Quick Information

Product Type: MOSFET
Series: NVS4001NT1G
Canonical Name: N-Channel MOSFET
Subcategory: N-Channel

NVS4001NT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVS4001NT1G Estimated Pricing

Qty Low High
1+ $0.07 $0.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVS4001NT1G Features

  • N-Channel MOSFET technology.
  • 30V drain-to-source voltage.
  • 270mA continuous drain current.
  • Surface mount SC-70-3 package.
  • Operates from -55°C to 150°C.

NVS4001NT1G Applications

  • Suitable for general switching applications.
  • Used in low-power signal control.
  • Ideal for compact electronic designs.
  • Component in portable devices.

NVS4001NT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NVS4001NT1G?

The maximum drain-source voltage (Vdss) for the NVS4001NT1G is 30V.

What is the continuous drain current of the NVS4001NT1G?

The continuous drain current for the NVS4001NT1G is 270mA at ambient temperature.

What is the package type for the NVS4001NT1G MOSFET?

The NVS4001NT1G is supplied in an SC-70-3 (SOT-323) package.

What is the operating temperature range of the NVS4001NT1G?

The operating temperature range for the NVS4001NT1G is -55°C to 150°C.

What is the Rds On (Max) for the NVS4001NT1G?

The Rds On (Max) for the NVS4001NT1G is 1.5 Ohm at 10mA drain current and 4V gate-source voltage.

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