NVMYS6D2N06CLTWG The NVMYS6D2N06CLTWG is an N-Channel MOSFET from On Semiconductor with a 60V drain-source voltage. It offers low Rds(on) and high current capabilities in a compact package.
Mfr Part #:

NVMYS6D2N06CLTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVMYS6D2N06CLTWG is an N-Channel MOSFET from On Semiconductor with a 60V drain-source voltage. It offers low Rds(on) and high current capabilities in a compact package.
✓ Total Stock: 87,019 pcs
$ Price Range: $0.99

NVMYS6D2N06CLTWG Available from 1 distributor

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✓ Non-Authorised
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NVMYS6D2N06CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMYS6D2N06CLTWG Description

Short technical summary and product information.

The NVMYS6D2N06CLTWG is a power MOSFET from ON Semiconductor designed for efficient power management applications. This N-channel device features a maximum drain-source voltage of 60V and a low on-resistance of 6.1mOhm at 10V gate-source voltage, minimizing conduction losses.

 

With a continuous drain current rating of 71A at a case temperature of 25°C and 3.6W power dissipation at ambient temperature, it is suitable for demanding applications. The MOSFET operates within a wide temperature range of -55°C to 175°C.

 

Packaged in a compact 4-LFPAK (5x6 mm) surface-mount package, the NVMYS6D2N06CLTWG is designed for space-constrained applications. Its features include low gate charge and capacitance, contributing to reduced driver losses. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and high-reliability applications.

NVMYS6D2N06CLTWG Quick Information

Product Type: MOSFET
Canonical Name: NVMYS6D2N06CLTWG N-Channel MOSFET
Subcategory: N-Channel

NVMYS6D2N06CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMYS6D2N06CLTWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMYS6D2N06CLTWG Features

  • 60V drain-source voltage rating.
  • Low 6.1mOhm Rds(on) at 10V Vgs.
  • High 71A continuous drain current.
  • Compact LFPAK4 surface-mount package.
  • AEC-Q101 qualified and PPAP capable.

NVMYS6D2N06CLTWG Applications

  • Suitable for power switching applications.
  • Ideal for compact and high-density designs.
  • Used in automotive and industrial systems.
  • Efficiently handles high current loads.

NVMYS6D2N06CLTWG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMYS6D2N06CLTWG?

The maximum drain-to-source voltage (Vds) is 60V.

What is the typical on-resistance of the NVMYS6D2N06CLTWG?

The maximum on-resistance is 6.1mOhm at a gate-source voltage of 10V and a drain current of 35A.

What is the continuous drain current rating?

The continuous drain current is 71A when measured at the case temperature of 25°C, and 17A when measured at the ambient temperature of 25°C.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is from -55°C to +175°C.

What package type is the NVMYS6D2N06CLTWG supplied in?

It is supplied in the LFPAK4 (5x6 mm) package, which is a 4-lead LFPAK surface-mount type.

Is the NVMYS6D2N06CLTWG RoHS compliant?

Yes, the device is RoHS3 compliant and also Pb-Free.

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