NVMYS5D3N04CTWG This N-Channel MOSFET from ON Semiconductor offers a 40V drain-to-source voltage and a continuous drain current of up to 71A at 25°C case temperature. It features a low Rds(on) of 5.3mOhm at 10V gate drive.
Mfr Part #:

NVMYS5D3N04CTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
This N-Channel MOSFET from ON Semiconductor offers a 40V drain-to-source voltage and a continuous drain current of up to 71A at 25°C case temperature. It features a low Rds(on) of 5.3mOhm at 10V gate drive.
✓ Total Stock: 8,295 pcs
$ Price Range: $0.99

NVMYS5D3N04CTWG Available from 1 distributor

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NVMYS5D3N04CTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMYS5D3N04CTWG Description

Short technical summary and product information.

The NVMYS5D3N04CTWG is an N-Channel Power MOSFET manufactured by ON Semiconductor. It is designed for applications requiring efficient power switching, featuring a 40V drain-to-source voltage rating and a low on-resistance of 5.3mOhm at 10V gate drive, measured at 35A drain current.

 

This MOSFET can handle a continuous drain current of up to 71A when the case temperature is 25°C, and 19A when the ambient temperature is 25°C. Its power dissipation is rated at 50W (Tc) and 3.6W (Ta) at 25°C. The device operates within a junction temperature range of -55°C to 175°C.

 

Packaged in a compact LFPAK4 (5x6 mm) surface-mount package, the NVMYS5D3N04CTWG is suitable for designs where space is a constraint. It is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and high-reliability applications. The device is Pb-free and RoHS compliant.

NVMYS5D3N04CTWG Quick Information

Product Type: MOSFET
Series: NVMYS5D3N04CTWG
Canonical Name: NVMYS5D3N04CTWG N-Channel MOSFET
Subcategory: Single

NVMYS5D3N04CTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMYS5D3N04CTWG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMYS5D3N04CTWG Features

  • 40V drain-to-source voltage rating.
  • 71A maximum continuous drain current.
  • 5.3mOhm maximum on-resistance.
  • Compact LFPAK4 surface-mount package.
  • AEC-Q101 qualified for reliability.

NVMYS5D3N04CTWG Applications

  • Suitable for high-efficiency power switching.
  • Ideal for compact power management designs.
  • Used in automotive applications.
  • Low conduction loss applications.

NVMYS5D3N04CTWG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVMYS5D3N04CTWG MOSFET?

The drain-to-source voltage (Vds) is 40V.

What is the maximum continuous drain current for the NVMYS5D3N04CTWG?

The maximum continuous drain current is 71A when measured at the case temperature (Tc) of 25°C, and 19A when measured at the ambient temperature (Ta) of 25°C.

What is the Rds On (Max) for the NVMYS5D3N04CTWG at 10V gate drive?

The maximum Rds On is 5.3mOhm when the drain current is 35A and the gate-source voltage is 10V.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is from -55°C to +175°C.

What package type is the NVMYS5D3N04CTWG MOSFET in?

It is available in the LFPAK4 (5x6 mm) package, also referred to as SOT-1023, 4-LFPAK.

Is the NVMYS5D3N04CTWG RoHS compliant?

Yes, the device is RoHS compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level is 1.

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