| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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33,000 pcs
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33000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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| Vgs (Max) | |
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The ON Semiconductor NVMYS4D6N04CLTWG is a single N-Channel MOSFET designed for power applications requiring efficient switching and low conduction losses. It boasts a drain-to-source voltage (Vds) of 40V and a low maximum on-resistance (Rds(on)) of 4.5mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 35A.
This MOSFET offers a continuous drain current of 78A when measured at the case temperature (Tc) of 25°C, and 21A when measured at an ambient temperature (Ta) of 25°C. Its power dissipation capabilities are rated at 50W (Tc=25°C) and 3.6W (Ta=25°C).
Packaged in the compact LFPAK4 (5x6 mm) surface-mount package, the NVMYS4D6N04CLTWG is suitable for designs where space is a constraint. It operates within a wide temperature range of -55°C to 175°C (TJ), making it robust for various environmental conditions. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and demanding industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) is 40V.
The maximum on-resistance (Rds(on)) is 4.5mOhm at a drain current of 35A and gate-source voltage of 10V.
The continuous drain current (Id) is 78A at a case temperature of 25°C.
The operating junction temperature range is -55°C to 175°C.
It is in the LFPAK4 (5x6 mm) package, suitable for surface mounting.
Yes, the device is RoHS Compliant.