NVMYS4D6N04CLTWG The ON Semiconductor NVMYS4D6N04CLTWG is an N-Channel MOSFET designed for power applications. It features a 40V drain-to-source voltage and a low on-resistance.
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NVMYS4D6N04CLTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMYS4D6N04CLTWG is an N-Channel MOSFET designed for power applications. It features a 40V drain-to-source voltage and a low on-resistance.
✓ Total Stock: 33,000 pcs
$ Price Range: $0.99

NVMYS4D6N04CLTWG Available from 1 distributor

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NVMYS4D6N04CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMYS4D6N04CLTWG Description

Short technical summary and product information.

The ON Semiconductor NVMYS4D6N04CLTWG is a single N-Channel MOSFET designed for power applications requiring efficient switching and low conduction losses. It boasts a drain-to-source voltage (Vds) of 40V and a low maximum on-resistance (Rds(on)) of 4.5mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 35A.

 

This MOSFET offers a continuous drain current of 78A when measured at the case temperature (Tc) of 25°C, and 21A when measured at an ambient temperature (Ta) of 25°C. Its power dissipation capabilities are rated at 50W (Tc=25°C) and 3.6W (Ta=25°C).

 

Packaged in the compact LFPAK4 (5x6 mm) surface-mount package, the NVMYS4D6N04CLTWG is suitable for designs where space is a constraint. It operates within a wide temperature range of -55°C to 175°C (TJ), making it robust for various environmental conditions. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and demanding industrial applications.

NVMYS4D6N04CLTWG Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET NVMYS4D6N04CLTWG
Subcategory: N-Channel

NVMYS4D6N04CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMYS4D6N04CLTWG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMYS4D6N04CLTWG Features

  • 40V drain-to-source voltage rating.
  • Low 4.5mOhm on-resistance at 10V.
  • High 78A continuous drain current.
  • Compact LFPAK4 surface-mount package.
  • AEC-Q101 qualified for reliability.

NVMYS4D6N04CLTWG Applications

  • Suitable for power switching circuits.
  • Used in high-efficiency power supplies.
  • Ideal for automotive applications.
  • Effective in motor control systems.

NVMYS4D6N04CLTWG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVMYS4D6N04CLTWG?

The drain-to-source voltage (Vds) is 40V.

What is the maximum on-resistance for the NVMYS4D6N04CLTWG?

The maximum on-resistance (Rds(on)) is 4.5mOhm at a drain current of 35A and gate-source voltage of 10V.

What is the continuous drain current at 25°C case temperature?

The continuous drain current (Id) is 78A at a case temperature of 25°C.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package type is the NVMYS4D6N04CLTWG in?

It is in the LFPAK4 (5x6 mm) package, suitable for surface mounting.

Is the NVMYS4D6N04CLTWG RoHS compliant?

Yes, the device is RoHS Compliant.

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