NVMYS4D1N06CLTWG The On Semiconductor NVMYS4D1N06CLTWG is an N-Channel MOSFET designed for power applications. It features a 60V drain-to-source voltage and low on-resistance.
Mfr Part #:

NVMYS4D1N06CLTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMYS4D1N06CLTWG is an N-Channel MOSFET designed for power applications. It features a 60V drain-to-source voltage and low on-resistance.
✓ Total Stock: 27,000 pcs
$ Price Range: $0.99

NVMYS4D1N06CLTWG Available from 1 distributor

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✓ Non-Authorised
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NVMYS4D1N06CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMYS4D1N06CLTWG Description

Short technical summary and product information.

The NVMYS4D1N06CLTWG is an N-Channel MOSFET from On Semiconductor, designed for efficient power management. It offers a 60V drain-to-source voltage (Vdss) and a low on-resistance of 4 mOhm at 50A and 10V gate drive. This device supports continuous drain currents of up to 100A at case temperature and 22A at ambient temperature.

 

Featuring a small footprint LFPAK4 (5x6 mm) package, it is suitable for compact designs. The MOSFET operates within a wide temperature range of -55°C to 175°C. Key electrical characteristics include a gate threshold voltage of 2V maximum and a gate charge of 34 nC at 10V.

 

This component is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and demanding industrial applications. It is also Pb-free and RoHS compliant.

NVMYS4D1N06CLTWG Quick Information

Product Type: MOSFET
Series: NVMYS4D1N06CLTWG
Canonical Name: N-Channel MOSFET
Subcategory: Single

NVMYS4D1N06CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMYS4D1N06CLTWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMYS4D1N06CLTWG Features

  • 60V drain-to-source voltage rating.
  • Low 4mOhm Rds(on) at 10V.
  • 100A continuous drain current capability.
  • Compact LFPAK4 surface mount package.
  • AEC-Q101 qualified and PPAP capable.

NVMYS4D1N06CLTWG Applications

  • Suitable for power switching applications.
  • Ideal for compact power supply designs.
  • Used in automotive systems.
  • Efficient for high current loads.

NVMYS4D1N06CLTWG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVMYS4D1N06CLTWG?

The drain-to-source voltage (Vdss) is 60V.

What is the maximum on-resistance for the NVMYS4D1N06CLTWG?

The maximum on-resistance is 4 mOhm when tested at 50A drain current and 10V gate-to-source voltage.

What is the continuous drain current rating?

The continuous drain current is 100A when measured at the case temperature (Tc) and 22A when measured at the ambient temperature (Ta).

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package type is the NVMYS4D1N06CLTWG supplied in?

It is supplied in the LFPAK4 (5x6 mm) package, which is a surface mount type.

Is the NVMYS4D1N06CLTWG RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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