| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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27,405 pcs
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27405 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET, part number NVMYS3D5N04CTWG from ON Semiconductor, is designed for power applications requiring efficient switching and low conduction losses. It boasts a drain-to-source voltage rating of 40V and can handle a continuous drain current of up to 102A when measured at the case temperature of 25°C, and 24A when measured at ambient temperature.
The MOSFET exhibits a low on-resistance (Rds(on)) of 3.3mOhm at a gate-to-source voltage of 10V, minimizing power dissipation during conduction. Key electrical characteristics include a gate threshold voltage of 3.5V (max) at 60µA, a gate charge of 23nC at 10V, and an input capacitance of 1600pF at 25V.
Operating across a wide temperature range from -55°C to 175°C, this device is suitable for demanding environments. It is housed in a compact LFPAK4 (5x6 mm) surface-mount package, facilitating space-constrained designs. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications. It is also Pb-Free and RoHS Compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) is 40V.
The continuous drain current is 102A when measured at the case temperature (Tc) of 25°C and 24A when measured at ambient temperature (Ta) of 25°C.
The Rds On is a maximum of 3.3mOhm at a drain current of 50A and a gate-to-source voltage of 10V.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in the LFPAK4 (5x6 mm) package, which is a surface-mount type.