| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,500 pcs
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3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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| Vgs (Max) | |
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The NVMYS3D3N06CLTWG from On Semiconductor is an N-Channel MOSFET designed for power applications requiring efficient switching and low conduction losses. This device boasts a 60V drain-to-source voltage (Vdss) and a maximum on-resistance of 3 mOhm at 50A and 10V gate-source voltage.
With a continuous drain current rating of 133A at 25°C case temperature and 26A at 25°C ambient temperature, it is suitable for high-power designs. The MOSFET operates within a wide temperature range of -55°C to 175°C.
Packaged in a compact LFPAK4 (5x6 mm) surface-mount package, the NVMYS3D3N06CLTWG offers a small footprint for space-constrained designs. It features low gate charge and capacitance, minimizing driver losses. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and demanding industrial applications. It is also Pb-free and RoHS compliant.
Key electrical characteristics include a gate threshold voltage of 2V maximum at 250µA and an input capacitance of 2880 pF maximum at 25V. The device also specifies a gate charge of 40.7 nC maximum at 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
The maximum on-resistance is 3 mOhm at 50A drain current and 10V gate-source voltage.
The continuous drain current is 133A when measured at the case temperature of 25°C, and 26A when measured at an ambient temperature of 25°C.
The operating junction and storage temperature range is from -55°C to +175°C.
It is supplied in the LFPAK4 (5x6 mm) package, which is a surface-mount type.
Yes, this device is RoHS 3 compliant.