NVMYS2D9N04CLTWG The ON Semiconductor NVMYS2D9N04CLTWG is an N-Channel MOSFET designed for power applications. It features a 40V drain-source voltage and low on-resistance.
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NVMYS2D9N04CLTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMYS2D9N04CLTWG is an N-Channel MOSFET designed for power applications. It features a 40V drain-source voltage and low on-resistance.
✓ Total Stock: 24,000 pcs
$ Price Range: $0.99

NVMYS2D9N04CLTWG Available from 1 distributor

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NVMYS2D9N04CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMYS2D9N04CLTWG Description

Short technical summary and product information.

The ON Semiconductor NVMYS2D9N04CLTWG is a single N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage of 40V and a low on-state resistance (RDS(on)) of 2.8mOhm at 10V Vgs, minimizing conduction losses.

 

This MOSFET is suitable for compact designs with its small footprint LFPAK4 package (5x6 mm). It boasts low gate charge (Qg) and capacitance, which helps minimize driver losses. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and demanding applications.

 

Key electrical characteristics include a gate threshold voltage of 2V maximum at 60µA and continuous drain currents of up to 110A (Tc) or 27A (Ta). Power dissipation is rated at 68W (Tc) or 3.7W (Ta). The operating temperature range is -55°C to 175°C.

 

This MOSFET is surface-mounted and comes in the LFPAK4 package. It is Pb-Free and RoHS compliant.

NVMYS2D9N04CLTWG Quick Information

Product Type: MOSFET
Canonical Name: NVMYS2D9N04CLTWG N-Channel MOSFET
Subcategory: N-Channel

NVMYS2D9N04CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NVMYS2D9N04CLTWG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMYS2D9N04CLTWG Features

  • 40V drain-to-source breakdown voltage.
  • Low 2.8mOhm Rds On at 10V Vgs.
  • High 110A continuous drain current.
  • Compact LFPAK4 (5x6 mm) package.
  • AEC-Q101 qualified for reliability.

NVMYS2D9N04CLTWG Applications

  • Suitable for power switching applications.
  • Ideal for compact electronic designs.
  • Used in automotive systems.
  • Minimizes conduction losses effectively.
  • Reduces driver losses significantly.

NVMYS2D9N04CLTWG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVMYS2D9N04CLTWG?

The maximum drain-to-source voltage (Vds) is 40V.

What is the typical on-resistance of the NVMYS2D9N04CLTWG?

The typical on-resistance (Rds On) is 2.8mOhm at 40A drain current and 10V gate-source voltage.

What is the maximum continuous drain current?

The maximum continuous drain current is 110A when measured at the case temperature (Tc) of 25°C, and 27A when measured at an ambient temperature (Ta) of 25°C.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMYS2D9N04CLTWG supplied in?

It is supplied in the LFPAK4 (5x6 mm) package, also referred to as SOT-1023, 4-LFPAK.

Is the NVMYS2D9N04CLTWG RoHS compliant?

Yes, the device is RoHS3 Compliant.

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