NVMYS2D2N06CLTWG The ON Semiconductor NVMYS2D2N06CLTWG is an N-Channel MOSFET designed for power applications. It features a 60V drain-to-source voltage and high current handling capabilities.
Mfr Part #:

NVMYS2D2N06CLTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMYS2D2N06CLTWG is an N-Channel MOSFET designed for power applications. It features a 60V drain-to-source voltage and high current handling capabilities.
✓ Total Stock: 4,771 pcs
$ Price Range: $0.99

NVMYS2D2N06CLTWG Available from 1 distributor

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NVMYS2D2N06CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMYS2D2N06CLTWG Description

Short technical summary and product information.

The ON Semiconductor NVMYS2D2N06CLTWG is a single N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of up to 185A at 25°C case temperature. The device boasts a low on-resistance (Rds(on)) of 1.9mOhm at 50A and 10Vgs, minimizing conduction losses.

 

This MOSFET is built using MOSFET (Metal Oxide) technology and operates within a wide temperature range of -55°C to 175°C. It features a gate-to-source voltage (Vgs) of ±20V and a gate threshold voltage (Vgs(th)) of 2V at 180µA. The input capacitance (Ciss) is 4850 pF at 25V, and the gate charge (Qg) is 69 nC at 10V.

 

The NVMYS2D2N06CLTWG is supplied in an LFPAK4 (5x6 mm) surface-mount package, suitable for compact designs. It has a maximum power dissipation of 134W at 25°C case temperature and 3.9W at 25°C ambient temperature. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications. It is also Pb-Free and RoHS Compliant.

NVMYS2D2N06CLTWG Quick Information

Product Type: MOSFET
Series: NVMYS2D2N06CLTWG
Canonical Name: N-Channel MOSFET, 60V, 185A
Subcategory: Single

NVMYS2D2N06CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMYS2D2N06CLTWG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMYS2D2N06CLTWG Features

  • 60V drain-to-source voltage rating.
  • High continuous drain current.
  • Low on-resistance for efficiency.
  • Wide operating temperature range.
  • AEC-Q101 Qualified for reliability.

NVMYS2D2N06CLTWG Applications

  • Suitable for power switching circuits.
  • Ideal for automotive applications.
  • Used in compact electronic designs.
  • Efficient power management solutions.

NVMYS2D2N06CLTWG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVMYS2D2N06CLTWG?

The drain-to-source voltage (Vdss) is 60V.

What is the maximum continuous drain current for the NVMYS2D2N06CLTWG?

The maximum continuous drain current is 185A at 25°C case temperature and 31A at 25°C ambient temperature.

What is the on-resistance of the NVMYS2D2N06CLTWG?

The on-resistance (Rds(on)) is a maximum of 1.9mOhm at 50A and 10Vgs.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMYS2D2N06CLTWG supplied in?

It is supplied in an LFPAK4 (5x6 mm) package.

Is the NVMYS2D2N06CLTWG RoHS compliant?

Yes, the device is RoHS Compliant.

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