NVMYS2D1N04CLTWG The ON Semiconductor NVMYS2D1N04CLTWG is an N-Channel MOSFET with a 40V drain-to-source voltage. It offers low Rds(on) and high current handling capabilities.
Mfr Part #:

NVMYS2D1N04CLTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMYS2D1N04CLTWG is an N-Channel MOSFET with a 40V drain-to-source voltage. It offers low Rds(on) and high current handling capabilities.
✓ Total Stock: 2,413 pcs
$ Price Range: $0.99

NVMYS2D1N04CLTWG Available from 1 distributor

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✓ Non-Authorised
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2,413 pcs
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NVMYS2D1N04CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMYS2D1N04CLTWG Description

Short technical summary and product information.

The ON Semiconductor NVMYS2D1N04CLTWG is a single N-Channel MOSFET designed for power applications. It features a drain-to-source voltage (Vds) of 40V and a low on-resistance (Rds(on)) of 2.5mOhm at 50A and 10V gate-to-source voltage.

 

This MOSFET can handle a continuous drain current of up to 132A at case temperature and 29A at ambient temperature. Its power dissipation is rated at 83W at case temperature and 3.9W at ambient temperature. The device operates within a junction and storage temperature range of -55°C to +175°C.

 

Packaged in an industry-standard LFPAK4 (5x6 mm) with a surface mount type, the NVMYS2D1N04CLTWG is suitable for compact designs. It is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications. The device is also Pb-free and RoHS compliant.

NVMYS2D1N04CLTWG Quick Information

Product Type: MOSFET
Canonical Name: NVMYS2D1N04CLTWG N-Channel MOSFET
Subcategory: N-Channel

NVMYS2D1N04CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NVMYS2D1N04CLTWG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMYS2D1N04CLTWG Features

  • 40V drain-to-source voltage rating.
  • Low 2.5mOhm Rds(on) at 10Vgs.
  • High 132A continuous drain current.
  • Compact LFPAK4 (5x6 mm) package.
  • AEC-Q101 qualified for automotive use.

NVMYS2D1N04CLTWG Applications

  • Suitable for power switching applications.
  • Ideal for compact electronic designs.
  • Used in automotive systems.
  • Efficient conduction loss minimization.

NVMYS2D1N04CLTWG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVMYS2D1N04CLTWG MOSFET?

The drain-to-source voltage (Vds) is 40V.

What is the maximum on-resistance for the NVMYS2D1N04CLTWG?

The maximum on-resistance (Rds On) is 2.5mOhm at 50A and 10V gate-to-source voltage.

What is the continuous drain current rating?

The continuous drain current is 132A at case temperature and 29A at ambient temperature.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NVMYS2D1N04CLTWG supplied in?

It is supplied in an LFPAK4 (5x6 mm) package.

Is the NVMYS2D1N04CLTWG RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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