NVMYS1D7N04CTWG The ON Semiconductor NVMYS1D7N04CTWG is an N-Channel MOSFET with a 40V drain-source voltage. It features a low on-resistance of 1.7mOhm at 50A and 10V.
Mfr Part #:

NVMYS1D7N04CTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMYS1D7N04CTWG is an N-Channel MOSFET with a 40V drain-source voltage. It features a low on-resistance of 1.7mOhm at 50A and 10V.
✓ Total Stock: 15,000 pcs
$ Price Range: $0.99

NVMYS1D7N04CTWG Available from 1 distributor

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NVMYS1D7N04CTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMYS1D7N04CTWG Description

Short technical summary and product information.

The ON Semiconductor NVMYS1D7N04CTWG is a single N-Channel MOSFET designed for power applications. It boasts a drain-source voltage (Vdss) of 40V and a low on-resistance (Rds On) of 1.7mOhm when driven at 10V with a drain current of 50A.

 

This MOSFET can handle a continuous drain current of up to 190A at the case temperature (Tc) and 36.6A at the ambient temperature (Ta). Its maximum power dissipation is rated at 107.1W (Tc) or 3.9W (Ta). The gate threshold voltage (Vgs(th)) is a maximum of 4V at 210µA, and the maximum gate-source voltage (Vgs) is ±20V.

 

Packaged in a surface-mount LFPAK4 (5x6) package, it operates within a wide temperature range of -55°C to 175°C (TJ). The input capacitance (Ciss) is a maximum of 3125pF at 25V, and the gate charge (Qg) is a maximum of 50nC at 10V.

 

This component is qualified under AEC-Q101, indicating its suitability for automotive applications. It is supplied in tape and reel packaging.

NVMYS1D7N04CTWG Quick Information

Product Type: MOSFET
Canonical Name: NVMYS1D7N04CTWG N-Channel MOSFET
Subcategory: Single N-Channel

NVMYS1D7N04CTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMYS1D7N04CTWG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMYS1D7N04CTWG Features

  • 40V drain-source voltage rating.
  • Low 1.7mOhm on-resistance.
  • High 190A continuous drain current.
  • Surface mount LFPAK4 package.
  • AEC-Q101 automotive qualified.

NVMYS1D7N04CTWG Applications

  • Used in power switching circuits
  • Suitable for high-speed switching applications
  • Ideal for power management modules
  • Designed for thermal efficiency in compact devices

NVMYS1D7N04CTWG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the NVMYS1D7N04CTWG MOSFET?

The drain-source voltage (Vdss) is 40V.

What is the maximum on-resistance for the NVMYS1D7N04CTWG?

The maximum on-resistance is 1.7mOhm at 50A drain current and 10V gate-source voltage.

What is the continuous drain current rating?

The continuous drain current is 36.6A at ambient temperature and 190A at case temperature.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the NVMYS1D7N04CTWG supplied in?

It is supplied in a surface mount LFPAK4 (5x6) package, also referred to as SOT-1023, 4-LFPAK.

Is this MOSFET AEC-Q101 qualified?

Yes, the NVMYS1D7N04CTWG is qualified under AEC-Q101.

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