NVMYS1D7N04CT1G The On Semiconductor NVMYS1D7N04CT1G is an N-Channel MOSFET designed for high-performance applications. It features a 40V drain-source voltage and a low on-resistance.
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NVMYS1D7N04CT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMYS1D7N04CT1G is an N-Channel MOSFET designed for high-performance applications. It features a 40V drain-source voltage and a low on-resistance.
✓ Total Stock: 39,771 pcs
$ Price Range: $0.99

NVMYS1D7N04CT1G Available from 1 distributor

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NVMYS1D7N04CT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMYS1D7N04CT1G Description

Short technical summary and product information.

The NVMYS1D7N04CT1G from On Semiconductor is a single N-Channel MOSFET belonging to the Transistors - FETs, MOSFETs - Single category. This device operates with a drain-to-source voltage (Vdss) of 40V and has a maximum on-resistance (Rds On) of 1.7mOhm at 50A and 10V gate-source voltage.

 

Key electrical characteristics include a continuous drain current of 36.6A at 25°C ambient temperature and 190A at 25°C case temperature, with a maximum power dissipation of 3.9W (Ta) and 107.1W (Tc). The gate charge (Qg) is 50 nC at 10V, and the gate threshold voltage (Vgs(th)) is 4V at 210µA. The operating temperature range is from -55°C to 175°C (TJ).

 

This MOSFET is available in a Surface Mount package, specifically LFPAK4 (5x6) which corresponds to SOT-1023, 4-LFPAK. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles. The RoHS status is compliant, and it has a Moisture Sensitivity Level (MSL) of 1.

NVMYS1D7N04CT1G Quick Information

Product Type: MOSFET
Series: NVMYS1D7N04CT1G
Canonical Name: NVMYS1D7N04CT1G N-Channel MOSFET
Subcategory: Single

NVMYS1D7N04CT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMYS1D7N04CT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMYS1D7N04CT1G Features

  • 40V drain-source voltage rating.
  • Low 1.7mOhm maximum on-resistance.
  • High 36.6A continuous drain current.
  • Wide -55°C to 175°C operating temperature.
  • Surface Mount LFPAK4 package.

NVMYS1D7N04CT1G Applications

  • Suitable for power switching applications.
  • Used in high-efficiency power designs.
  • Ideal for automotive applications.
  • General purpose power management.

NVMYS1D7N04CT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NVMYS1D7N04CT1G?

The drain-to-source voltage (Vdss) is 40V.

What is the maximum on-resistance of the NVMYS1D7N04CT1G?

The maximum on-resistance (Rds On) is 1.7mOhm at 50A and 10V.

What is the continuous drain current rating?

The continuous drain current is 36.6A at 25°C ambient and 190A at 25°C case.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the NVMYS1D7N04CT1G available in?

It is available in a Surface Mount LFPAK4 (5x6) package.

Is the NVMYS1D7N04CT1G RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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