| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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39,771 pcs
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39771 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVMYS1D7N04CT1G from On Semiconductor is a single N-Channel MOSFET belonging to the Transistors - FETs, MOSFETs - Single category. This device operates with a drain-to-source voltage (Vdss) of 40V and has a maximum on-resistance (Rds On) of 1.7mOhm at 50A and 10V gate-source voltage.
Key electrical characteristics include a continuous drain current of 36.6A at 25°C ambient temperature and 190A at 25°C case temperature, with a maximum power dissipation of 3.9W (Ta) and 107.1W (Tc). The gate charge (Qg) is 50 nC at 10V, and the gate threshold voltage (Vgs(th)) is 4V at 210µA. The operating temperature range is from -55°C to 175°C (TJ).
This MOSFET is available in a Surface Mount package, specifically LFPAK4 (5x6) which corresponds to SOT-1023, 4-LFPAK. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles. The RoHS status is compliant, and it has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 40V.
The maximum on-resistance (Rds On) is 1.7mOhm at 50A and 10V.
The continuous drain current is 36.6A at 25°C ambient and 190A at 25°C case.
The operating temperature range is -55°C to 175°C (TJ).
It is available in a Surface Mount LFPAK4 (5x6) package.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.