NVMYS1D6N04CLTWG The On Semiconductor NVMYS1D6N04CLTWG is an N-Channel MOSFET designed for power applications. It features a 40V drain-to-source voltage and low on-state resistance.
Mfr Part #:

NVMYS1D6N04CLTWG

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVMYS1D6N04CLTWG is an N-Channel MOSFET designed for power applications. It features a 40V drain-to-source voltage and low on-state resistance.
✓ Total Stock: 7,000 pcs
$ Price Range: $0.99

NVMYS1D6N04CLTWG Available from 2 distributors

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✓ Non-Authorised
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6,000 pcs
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NVMYS1D6N04CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMYS1D6N04CLTWG Description

Short technical summary and product information.

The NVMYS1D6N04CLTWG from On Semiconductor is a single N-Channel MOSFET designed for efficient power management. It offers a drain-to-source voltage (Vdss) of 40V and a low on-state resistance (Rds(on)) of 1.6 mOhm at a gate-source voltage of 10V, minimizing conduction losses.

 

This MOSFET boasts a continuous drain current (Id) of 185A at a case temperature of 25°C and 35A at an ambient temperature of 25°C, with a maximum power dissipation of 107.1W (Tc) or 3.8W (Ta). Its operating temperature range is -55°C to 175°C (TJ).

 

The device utilizes MOSFET technology and comes in an LFPAK4 package, suitable for surface mounting. Key electrical characteristics include a gate threshold voltage (Vgs(th)) between 1V and 3V, and a gate charge (Qg) of 71 nC at 10V.

 

Features such as AEC-Q101 qualification and PPAP capability indicate its suitability for demanding automotive and industrial applications where reliability is critical. The Pb-free and halogen-free compliance further aligns with environmental standards.

NVMYS1D6N04CLTWG Quick Information

Product Type: MOSFET
Series: NVMYS1D6N04CLTWG
Canonical Name: N-Channel MOSFET
Subcategory: Single

NVMYS1D6N04CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMYS1D6N04CLTWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMYS1D6N04CLTWG Features

  • 40V drain-to-source voltage rating.
  • Low 1.6mOhm on-state resistance.
  • High 185A continuous drain current.
  • LFPAK4 surface mount package.
  • AEC-Q101 qualified for reliability.

NVMYS1D6N04CLTWG Applications

  • Suitable for high-power switching.
  • Ideal for automotive applications.
  • Used in industrial power supplies.
  • Efficient motor control circuits.

NVMYS1D6N04CLTWG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NVMYS1D6N04CLTWG?

The drain-to-source voltage (Vdss) is 40V.

What is the maximum on-state resistance of the NVMYS1D6N04CLTWG?

The maximum on-state resistance is 1.6 mOhm at a gate-source voltage of 10V and a drain current of 50A.

What is the continuous drain current rating?

The continuous drain current is 185A when measured at the case temperature of 25°C, and 35A when measured at an ambient temperature of 25°C.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NVMYS1D6N04CLTWG supplied in?

It is supplied in the LFPAK4 (5x6) package, which is suitable for surface mounting.

Is the NVMYS1D6N04CLTWG RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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