| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from ON Semiconductor, part number NVMYS1D6N04CLT1G, is designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 40V and a low on-resistance (Rds On) of 1.6mOhm when tested at 50A and 10V gate-source voltage. The continuous drain current is rated at 35A at ambient temperature and up to 185A at case temperature.
The MOSFET has a gate threshold voltage (Vgs(th)) of 3V at 210µA and a maximum gate-source voltage of ±20V. Input capacitance (Ciss) is 4301 pF at 25V, and gate charge (Qg) is 71nC at 10V. The operating temperature range is -55°C to 175°C (TJ).
Packaged in a SOT-1023, 4-LFPAK (LFPAK4 5x6) configuration, this device is suitable for surface mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles. Power dissipation is 3.8W at ambient temperature and 107.1W at case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the NVMYS1D6N04CLT1G is 40V.
The maximum on-resistance (Rds On) is 1.6mOhm at 50A and 10V.
The continuous drain current is 35A at ambient temperature and 185A at case temperature.
The operating temperature range is -55°C to 175°C (TJ).
It is supplied in a SOT-1023, 4-LFPAK package, also referred to as LFPAK4 (5x6), suitable for surface mounting.