NVMYS1D6N04CLT1G The ON Semiconductor NVMYS1D6N04CLT1G is an N-Channel MOSFET with a 40V drain-source voltage and a low on-resistance of 1.6mOhm at 50A. It is supplied in a surface-mount LFPAK4 package.
Mfr Part #:

NVMYS1D6N04CLT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVMYS1D6N04CLT1G is an N-Channel MOSFET with a 40V drain-source voltage and a low on-resistance of 1.6mOhm at 50A. It is supplied in a surface-mount LFPAK4 package.
✓ Total Stock: 30,000 pcs
$ Price Range: $0.99

NVMYS1D6N04CLT1G Available from 1 distributor

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NVMYS1D6N04CLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVMYS1D6N04CLT1G Description

Short technical summary and product information.

This N-Channel MOSFET from ON Semiconductor, part number NVMYS1D6N04CLT1G, is designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 40V and a low on-resistance (Rds On) of 1.6mOhm when tested at 50A and 10V gate-source voltage. The continuous drain current is rated at 35A at ambient temperature and up to 185A at case temperature.

 

The MOSFET has a gate threshold voltage (Vgs(th)) of 3V at 210µA and a maximum gate-source voltage of ±20V. Input capacitance (Ciss) is 4301 pF at 25V, and gate charge (Qg) is 71nC at 10V. The operating temperature range is -55°C to 175°C (TJ).

 

Packaged in a SOT-1023, 4-LFPAK (LFPAK4 5x6) configuration, this device is suitable for surface mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles. Power dissipation is 3.8W at ambient temperature and 107.1W at case temperature.

NVMYS1D6N04CLT1G Quick Information

Product Type: MOSFET
Canonical Name: NVMYS1D6N04CLT1G N-Channel MOSFET
Subcategory: Single

NVMYS1D6N04CLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVMYS1D6N04CLT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVMYS1D6N04CLT1G Features

  • 40V drain-source voltage rating.
  • 1.6mOhm maximum on-resistance.
  • 35A continuous drain current.
  • Surface mount LFPAK4 package.
  • Wide operating temperature range.

NVMYS1D6N04CLT1G Applications

  • Suitable for power switching circuits.
  • Ideal for high current applications.
  • Used in compact electronic designs.
  • Efficient power management solutions.

NVMYS1D6N04CLT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NVMYS1D6N04CLT1G?

The maximum drain-source voltage (Vdss) for the NVMYS1D6N04CLT1G is 40V.

What is the on-resistance of the NVMYS1D6N04CLT1G?

The maximum on-resistance (Rds On) is 1.6mOhm at 50A and 10V.

What is the continuous drain current rating?

The continuous drain current is 35A at ambient temperature and 185A at case temperature.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the NVMYS1D6N04CLT1G supplied in?

It is supplied in a SOT-1023, 4-LFPAK package, also referred to as LFPAK4 (5x6), suitable for surface mounting.

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